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参数资料
| 型号： | W3E64M16S-200NBM |
| 厂商： | MICROSEMI CORP-PMG MICROELECTRONICS |
| 元件分类： | DRAM |
| 英文描述： | 64M X 16 DDR DRAM, 0.8 ns, PBGA60 |
| 封装： | 10 X 12.50 MM, 1.50 MM HEIGHT, PLASTIC, BGA-60 |
| 文件页数： | 15/17页 |
| 文件大小： | 493K |
| 代理商： | W3E64M16S-200NBM |
7
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
White Electronic Designs
W3E64M16S-XNBX
May 2008
Rev. 0
TABLE 1 – BURST DEFINITION
NOTES:
1.
For a burst length of two, A1-Ai select two-data-element block; A0 selects the
starting column within the block.
2.
For a burst length of four, A2-Ai select four-data-element block; A0-1 select the
starting column within the block.
3.
For a burst length of eight, A3-Ai select eight-data-element block; A0-2 select the
starting column within the block.
4.
Whenever a boundary of the block is reached within a given sequence above, the
following access wraps within the block.
FIGURE 3 MODE REGISTER DEFINITION
issued. Except in the case of concurrent auto precharge,
where a READ or WRITE command to a different bank is
allowed as long as it does not interrupt the data transfer
in the current bank and does not violate any other timing
parameters. Input A10 determines whether one or all
banks are to be precharged, and in the case where only
one bank is to be precharged, inputs BA0, BA1 select the
bank. Otherwise BA0, BA1 are treated as “Don’t Care.”
Once a bank has been precharged, it is in the idle state and
must be activated prior to any READ or WRITE commands
being issued to that bank. A PRECHARGE command will
be treated as a NOP if there is no open row in that bank
(idle state), or if the previously open row is already in the
process of precharging.
AUTO PRECHARGE
AUTO PRECHARGE is a feature which performs the
same individual-bank PRECHARGE function described
above, but without requiring an explicit command. This is
accomplished by using A10 to enable AUTO PRECHARGE
in conjunction with a specific READ or WRITE command.
A precharge of the bank/row that is addressed with the
READ or WRITE command is automatically performed
upon completion of the READ or WRITE burst. AUTO
PRECHARGE is nonpersistent in that it is either enabled
or disabled for each individual READ or WRITE command.
The device supports concurrent auto precharge if the
command to the other bank does not interrupt the data
transfer to the current bank.
Burst
Length
Starting Column
Address
Order of Accesses Within a Burst
Type = Sequential
Type = Interleaved
2
A0
0
0-1
1
1-0
4
A1
A0
0
0-1-2-3
0
1
1-2-3-0
1-0-3-2
1
0
2-3-0-1
1
3-0-1-2
3-2-1-0
8
A2
A1
A0
0
0-1-2-3-4-5-6-7
0
1
1-2-3-4-5-6-7-0
1-0-3-2-5-4-7-6
0
1
0
2-3-4-5-6-7-0-1
2-3-0-1-6-7-4-5
0
1
3-4-5-6-7-0-1-2
3-2-1-0-7-6-5-4
1
0
4-5-6-7-0-1-2-3
1
0
1
5-6-7-0-1-2-3-4
5-4-7-6-1-0-3-2
1
0
6-7-0-1-2-3-4-5
6-7-4-5-2-3-0-1
1
7-0-1-2-3-4-5-6
7-6-5-4-3-2-1-0
相关PDF资料 |
PDF描述 |
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| W3E64M16S-333SBC | 64M X 16 DDR DRAM, 0.7 ns, PBGA60 |
| W3E64M72S-266SBC | 64M X 72 DDR DRAM, 0.75 ns, PBGA219 |
| W3E64M72S-333SBI | 64M X 72 DDR DRAM, 0.7 ns, PBGA219 |
| W3E64M72S-333SBM | 64M X 72 DDR DRAM, 0.7 ns, PBGA219 |
| W3E64M72S-200SBC | 64M X 72 DDR DRAM, 0.8 ns, PBGA219 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| W3E64M16S-200SBC | 制造商:Microsemi Corporation 功能描述:64M X 16 DDR, 2.5V, 200 MHZ, 60 PBGA, COMMERCIAL TEMP. - Bulk |
| W3E64M16S-200SBI | 制造商:Microsemi Corporation 功能描述:64M X 16 DDR, 2.5V, 200 MHZ, 60 PBGA, INDUSTRIAL TEMP. - Bulk |
| W3E64M16S-200SBM | 制造商:Microsemi Corporation 功能描述:64M X 16 DDR, 2.5V, 200 MHZ, 60 PBGA, MIL-TEMP. - Bulk |
| W3E64M16S-250NBC | 制造商:Microsemi Corporation 功能描述:64M X 16 DDR, 2.5V, 250 MHZ, 60 PBGA, COMMERCIAL TEMP. - Bulk |
| W3E64M16S-250NBI | 制造商:Microsemi Corporation 功能描述:64M X 16 DDR, 2.5V, 250 MHZ, 60 PBGA, INDUSTRIAL TEMP. - Bulk |
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