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| 型号： | W3E64M16S-266NBC |
| 厂商： | WHITE ELECTRONIC DESIGNS CORP |
| 元件分类： | DRAM |
| 英文描述： | 64M X 16 DDR DRAM, 0.75 ns, PBGA60 |
| 封装： | 10 X 12.50 MM, 1.50 MM HEIGHT, PLASTIC, BGA-60 |
| 文件页数： | 2/17页 |
| 文件大小： | 493K |
| 代理商： | W3E64M16S-266NBC |
10
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
White Electronic Designs
W3E64M16S-XNBX
May 2008
Rev. 0
ABSOLUTE MAXIMUM RATINGS
Parameter
Unit
Voltage on VCC, VCCQ Supply relative to Vss
-1 to 3.6
V
Voltage on I/O pins relative to Vss
-1 to 3.6
V
Operating Temperature TA (Mil)
-55 to +125
°C
Operating Temperature TA (Ind)
-40 to +85
°C
Storage Temperature, Plastic
-55 to +125
°C
NOTE: Stress greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of
the device at these or any other conditions greater than those indicated in the operational sections of this specication is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect reliability.
CAPACITANCE (NOTE 13)
Parameter
Symbol
Max
Unit
Input Capacitance: CK/CK#
CI1
TBD
pF
Addresses, BA0-1 Input Capacitance
CA
TBD
pF
Input Capacitance: All other input-only pins
CI2
TBD
pF
Input/Output Capacitance: I/Os
CIO
TBD
pF
BGA THERMAL RESISTANCE
Description
Symbol
Max
Units
Notes
Junction to Ambient (No Airow)
Theta JA
TBD
°C/W
1
Junction to Ball
Theta JB
TBD
°C/W
1
Junction to Case (Top)
Theta JC
TBD
°C/W
1
Refer to "PBGA Thermal Resistance Correlation" (Application Note) at www.whiteedc.com in the application notes section for modeling conditions.
AC INPUT OPERATING CONDITIONS
VCC, VCCQ = +2.5V ± 0.2V; -55°C ≤ TA ≤ +125°C
Parameter/Condition
Symbol
Min
Max
Units
Input High (Logic 1) Voltage
VIH
VREF +0.310
—
V
Input Low (Logic 0) Voltage
VIL
—VREF -0.310
V
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PDF描述 |
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| W3E64M16S-200NBM | 64M X 16 DDR DRAM, 0.8 ns, PBGA60 |
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| W3E64M72S-266SBC | 64M X 72 DDR DRAM, 0.75 ns, PBGA219 |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| W3E64M16S-266NBI | 制造商:Microsemi Corporation 功能描述:64M X 16 DDR, 2.5V, 266 MHZ, 60 PBGA, INDUSTRIAL TEMP. - Bulk |
| W3E64M16S-266NBM | 制造商:Microsemi Corporation 功能描述:64M X 16 DDR, 2.5V, 266 MHZ, 60 PBGA, MIL-TEMP. - Bulk |
| W3E64M16S-266SBC | 制造商:Microsemi Corporation 功能描述:64M X 16 DDR, 2.5V, 266 MHZ, 60 PBGA, COMMERCIAL TEMP. - Bulk |
| W3E64M16S-266SBI | 制造商:Microsemi Corporation 功能描述:64M X 16 DDR, 2.5V, 266 MHZ, 60 PBGA, INDUSTRIAL TEMP. - Bulk |
| W3E64M16S-266SBM | 制造商:Microsemi Corporation 功能描述:64M X 16 DDR, 2.5V, 266 MHZ, 60 PBGA, MIL-TEMP. - Bulk |
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