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参数资料
| 型号： | W3E64M16S-266NBC |
| 厂商： | WHITE ELECTRONIC DESIGNS CORP |
| 元件分类： | DRAM |
| 英文描述： | 64M X 16 DDR DRAM, 0.75 ns, PBGA60 |
| 封装： | 10 X 12.50 MM, 1.50 MM HEIGHT, PLASTIC, BGA-60 |
| 文件页数： | 8/17页 |
| 文件大小： | 493K |
| 代理商： | W3E64M16S-266NBC |
16
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
White Electronic Designs
W3E64M16S-XNBX
May 2008
Rev. 0
ORDERING INFORMATION
WHITE ELECTRONIC DESIGNS CORP.
DDR SDRAM
CONFIGURATION, 64M x 16
2.5V Power Supply
DATA RATE (Mbs)
200 = 200Mbs
250 = 250Mbs
266 = 266Mbs
333 = 333Mbs
PACKAGE:
NB = 60 Thin Plastic Ball Grid Array (PBGA),10 mm x 12.5 mm x
1.5mm
DEVICE GRADE:
M = Military
-55°C to +125°C
I = Industrial
-40°C to +85°C
C = Commercial 0°C to +70°C
W 3E 64M 16 S - XXX NB X
相关PDF资料 |
PDF描述 |
|---|---|
| W3E64M16S-200NBM | 64M X 16 DDR DRAM, 0.8 ns, PBGA60 |
| W3E64M16S-333SBC | 64M X 16 DDR DRAM, 0.7 ns, PBGA60 |
| W3E64M72S-266SBC | 64M X 72 DDR DRAM, 0.75 ns, PBGA219 |
| W3E64M72S-333SBI | 64M X 72 DDR DRAM, 0.7 ns, PBGA219 |
| W3E64M72S-333SBM | 64M X 72 DDR DRAM, 0.7 ns, PBGA219 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| W3E64M16S-266NBI | 制造商:Microsemi Corporation 功能描述:64M X 16 DDR, 2.5V, 266 MHZ, 60 PBGA, INDUSTRIAL TEMP. - Bulk |
| W3E64M16S-266NBM | 制造商:Microsemi Corporation 功能描述:64M X 16 DDR, 2.5V, 266 MHZ, 60 PBGA, MIL-TEMP. - Bulk |
| W3E64M16S-266SBC | 制造商:Microsemi Corporation 功能描述:64M X 16 DDR, 2.5V, 266 MHZ, 60 PBGA, COMMERCIAL TEMP. - Bulk |
| W3E64M16S-266SBI | 制造商:Microsemi Corporation 功能描述:64M X 16 DDR, 2.5V, 266 MHZ, 60 PBGA, INDUSTRIAL TEMP. - Bulk |
| W3E64M16S-266SBM | 制造商:Microsemi Corporation 功能描述:64M X 16 DDR, 2.5V, 266 MHZ, 60 PBGA, MIL-TEMP. - Bulk |
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