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参数资料
| 型号： | W3E64M72S-333SBC |
| 厂商： | MICROSEMI CORP-PMG MICROELECTRONICS |
| 元件分类： | DRAM |
| 英文描述： | 64M X 72 DDR DRAM, 0.7 ns, PBGA219 |
| 封装： | 25 X 32 MM, PLASTIC, BGA-219 |
| 文件页数： | 5/19页 |
| 文件大小： | 496K |
| 代理商： | W3E64M72S-333SBC |
W3E64M72S-XSBX
13
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
White Electronic Designs
September 2007
Rev. 3
White Electronic Designs Corp. reserves the right to change products or specications without notice.
Parameter/Condition
MAX
Symbol 333Mbs 250MHz
266MHz
200MHz
Units
OPERATING CURRENT: One bank; Active-Precharge; tRC = tRC (MIN); tCK = tCK (MIN); DQ, DM, and DQS
inputs changing once per clock cyle; Address and control inputs changing once every two clock cycles; (22,
47)
ICC0
1,170
1,035
mA
OPERATING CURRENT: One bank; Active-Read-Precharge; Burst = 2; tRC = tRC (MIN); tCK = tCK (MIN);
IOUT = 0mA; Address and control inputs changing once per clock cycle (22, 47)
ICC1
1,440
1,305
mA
PRECHARGE POWER-DOWN STANDBY CURRENT: All banks idle; Power-down mode; tCK = tCK
(MIN); CKE = LOW; (23, 32, 49)
ICC2P
45
mA
IDLE STANDBY CURRENT: CS = HIGH; All banks idle; tCK = tCK (MIN); CKE = HIGH; Address and other
control inputs changing once per clock cycle. VIN = VREF for DQ, DQS, and DM (50)
ICC2F
405
360
mA
ACTIVE POWER-DOWN STANDBY CURRENT: One bank active; Power-down mode; tCK = tCK (MIN);
CKE = LOW (23, 32, 49)
ICC3P
315
270
mA
ACTIVE STANDBY CURRENT: CS = HIGH; CKE = HIGH; One bank; Active-Precharge; tRC = tRAS
(MAX); tCK = tCK (MIN); DQ, DM, and DQS inputs changing twice per clock cycle; Address and other
control inputs changing once per clock cycle (22)
ICC3N
450
405
mA
OPERATING CURRENT: Burst = 2; Reads; Continuous burst; One bank active; Address and control
inputs changing once per clock cycle; tCK = tCK (MIN); IOUT = 0mA (22, 47)
ICC4R
1,485
1,305
mA
OPERATING CURRENT: Burst = 2; Writes; Continuous burst; One bank active; Address and control
inputs changing once per clock cycle; tCK = tCK (MIN); DQ, DM, and DQS inputs changing twice per clock
cycle (22)
ICC4W
1,755
1,440
1,215
mA
AUTO REFRESH CURRENT
tREFC = tRC (MIN) (49)
ICC5
2,610
mA
tREFC = 7.8125μs (27, 49)
ICC5A
90
mA
SELF REFRESH CURRENT: CKE 0.2V
Standard (11)
ICC6
45
mA
OPERATING CURRENT: Four bank interleaving READs (BL=4) with auto precharge, tRC =tRC (MIN); tCK =
tCK (MIN); Address and control inputs change only during Active READ or WRITE commands. (22, 48)
ICC7
3,645
mA
ICC SPECIFICATIONS AND CONDITIONS
(NOTES 1-5, 10, 12, 14, 46)
VCC, VCCQ = +2.5V ± 0.2V; -55°C ≤ TA ≥ +125°C
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| W3E64M72S-250BM | 64M X 72 SYNCHRONOUS DRAM, 0.8 ns, PBGA219 |
| W3EG128M72ETSU262JD3 | 128M X 72 DDR DRAM MODULE, 0.75 ns, DMA184 |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| W3E64M72S-333SBI | 制造商:Microsemi Corporation 功能描述:W3E64M72S-333SBI - Bulk 制造商:Microsemi Corporation 功能描述:SDRAM MEMORY |
| W3E64M72S-XBX | 制造商:WEDC 制造商全称:White Electronic Designs Corporation 功能描述:64Mx72 DDR SDRAM |
| W3EG128M72ETSU202AJD3 | 制造商:WEDC 制造商全称:White Electronic Designs Corporation 功能描述:1GB - 128Mx72 DDR SDRAM UNBUFFERED ECC w/PLL |
| W3EG128M72ETSU202D3 | 制造商:WEDC 制造商全称:White Electronic Designs Corporation 功能描述:1GB - 128Mx72 DDR SDRAM UNBUFFERED ECC w/PLL |
| W3EG128M72ETSU202JD3 | 制造商:WEDC 制造商全称:White Electronic Designs Corporation 功能描述:1GB - 128Mx72 DDR SDRAM UNBUFFERED ECC w/PLL |
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