- 您现在的位置：买卖IC网 > PDF目录361781 > W3EG6462S335D3 512MB - 2x32Mx64 DDR SDRAM UNBUFFERED PDF资料下载
参数资料
| 型号： | W3EG6462S335D3 |
| 英文描述： | 512MB - 2x32Mx64 DDR SDRAM UNBUFFERED |
| 中文描述： | 512MB的- 2x32Mx64 DDR SDRAM内存缓冲 |
| 文件页数： | 7/13页 |
| 文件大小： | 250K |
| 代理商： | W3EG6462S335D3 |
White Electronic Designs
W3EG6462S-D3
-JD3
7
White Electronic Designs Corporation (602) 437-1520 www.wedc.com
May 2005
Rev. 4
ADVANCED
DDR SDRAM COMPONENT ELECTRICAL CHARACTERISTICS AND
RECOMMENDED AC OPERATING CONDITIONS
AC CHARACTERISTICS
PARAMETER
SYMBOL
Access window of DQs from CK/CK#
t
AC
CK high-level width
t
CH
CK low-level width
t
CL
Clock cycle time
CL = 3
tCK (3)
CL = 2.5
t
CK (2.5)
CL = 2
t
CK (2)
DQ and DM input hold time relative to DQS
t
DH
DQ and DM input setup time relative to DQS
t
DS
DQ and DM input pulse width (for each input)
t
DIPW
Access window of DQS from CK/CK#
t
DQSCK
DQS input high pulse width
t
DQSH
DQS input low pulse width
t
DQSL
DQS-DQ skew, DQS to last DQ valid, per group, per
access
Write command to first DQS latching transition
t
DQSS
DQS falling edge to CK rising - setup time
t
DSS
DQS falling edge from CK rising - hold time
t
DSH
Half clock period
t
HP
Data-out high-impedance window from CK/CK#
t
HZ
Data-out low-impedance window from CK/CK#
t
LZ
Address and control input hold time (fast slew rate)
t
IHF
Address and control input setup time (fast slew rate)
t
ISF
Address and control input hold time (slow slew rate)
t
IHS
403
335
262
263/265
MIN
202
MIN
MAX
MIN
-0.7
0.45
0.45
6
6
7.5
0.45
0.45
1.75
-0.60 +0.60 -0.75 +0.75 -0.75 +0.75 -0.75 +0.75
0.35
0.35
0.35
0.35
0.45
0.5
MAX
+0.7
0.55
0.55
13
13
13
MIN
-0.75 +0.75 -0.75 +0.75 -0.75 +0.75
0.45
0.55
0.45
0.45
0.55
0.45
7.5
13
7.5
7.5
13
7.5
7.5/10
13
7.5/10
0.5
0.5
0.5
0.5
1.75
1.75
MAX
MAX
MIN
MAX UNITS NOTES
ns
0.55
t
CK
0.55
t
CK
13
ns
13
ns
13
ns
ns
ns
ns
ns
t
CK
t
CK
ns
0.55
0.55
13
13
13
0.45
0.45
7.5
7.5
7.5/10
0.5
0.5
1.75
26
26
5
6
7.5
13
13
40, 45
40, 45
40, 45
23, 27
23, 27
27
7.5
0.4
0.4
1.75
-0.6
0.35
0.35
0.35
0.35
0.5
0.35
0.35
0.5
t
DQSQ
0.40
22, 23
0.72
0.2
0.2
1.28
0.75
0.2
0.2
1.25
0.75
0.2
0.2
1.25
0.75
0.2
0.2
1.25
0.75
0.2
0.2
1.25
t
CK
t
CK
t
CK
ns
ns
ns
ns
ns
ns
t
CH,
t
CL
t
CH,
t
CL
t
CH,
t
CL
t
CH,
t
CL
t
CH,
t
CL
31
+0.70
+0.70
+0.75
+0.75
+0.75
16, 36
16, 36
12
12
12
-0.70
0.6
0.6
0.6
-0.70
0.75
0.75
0.80
-0.75
0.90
0.90
1
-0.75
.90
.90
1
-0.75
.90
.90
1
相关PDF资料 |
PDF描述 |
|---|---|
| W3EG6467S-D4 | 512MB - 2x32Mx64 DDR SDRAM UNBUFFERED |
| W3EG64M64ETSU335D4IMG | 512MB - 64Mx64 DDR SDRAM, UNBUFFERED, SO-DIMM |
| W3EG64M64ETSU335D4ISG | 512MB - 64Mx64 DDR SDRAM, UNBUFFERED, SO-DIMM |
| W3EG64M64ETSU335D4MG | 512MB - 64Mx64 DDR SDRAM, UNBUFFERED, SO-DIMM |
| W3EG64M64ETSU335D4SG | 512MB - 64Mx64 DDR SDRAM, UNBUFFERED, SO-DIMM |
相关代理商/技术参数 |
参数描述 |
|---|---|
| W3EG6462S335JD3 | 制造商:WEDC 制造商全称:White Electronic Designs Corporation 功能描述:512MB - 2x32Mx64 DDR SDRAM UNBUFFERED |
| W3EG6462S403D3 | 制造商:WEDC 制造商全称:White Electronic Designs Corporation 功能描述:512MB - 2x32Mx64 DDR SDRAM UNBUFFERED |
| W3EG6462S403JD3 | 制造商:WEDC 制造商全称:White Electronic Designs Corporation 功能描述:512MB - 2x32Mx64 DDR SDRAM UNBUFFERED |
| W3EG6462S-D3 | 制造商:WEDC 制造商全称:White Electronic Designs Corporation 功能描述:512MB - 2x32Mx64 DDR SDRAM UNBUFFERED |
| W3EG6462S-JD3 | 制造商:WEDC 制造商全称:White Electronic Designs Corporation 功能描述:512MB - 2x32Mx64 DDR SDRAM UNBUFFERED |
发布紧急采购，3分钟左右您将得到回复。