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参数资料
| 型号： | W3EG64M64ETSU403D4SG |
| 英文描述： | 512MB - 64Mx64 DDR SDRAM, UNBUFFERED, SO-DIMM |
| 中文描述： | 512MB的- 64Mx64 DDR SDRAM，可缓冲，SO - DIMM插槽 |
| 文件页数： | 4/12页 |
| 文件大小： | 190K |
| 代理商： | W3EG64M64ETSU403D4SG |
WV3EG64M64ETSU-D4
4
White Electronic Designs Corporation (602) 437-1520 www.wedc.com
White Electronic Designs
March 2006
Rev. 0
PRELIMINARY
DC OPERATING CONDITIONS
T
A
= 0°C to 70°C
Parameter/Condition
Supply Voltage DDR400 (nominal VCC 2.6)
I/O Supply Voltage DDR400 (nominal VCC 2.6)
Supply Voltage DDR333
I/O Supply Voltage DDR333
I/O Reference Voltage
I/O Termination Voltage (system)
Input High (Logic 1) Voltage
Input Low (Logic 0) Voltage
Input voltage level, CK and CK#
Input differential voltage, CK and CK#
Input crossing point voltage, CK and CK#
Symbol
V
CC
V
CCQ
V
CC
V
CCQ
V
REF
V
TT
V
IH(DC)
V
IL(DC)
V
IN(DC)
V
ID(DC)
V
IX(DC)
Min
2.5
2.5
2.3
2.3
Max
2.7
2.7
2.7
2.7
Units
V
V
V
V
V
V
V
V
V
V
V
Notes
0.49 × V
CCQ
V
REF
- 0.04
V
REF
+ 0.15
-0.3
-0.3
-0.3
-0.3
0.51 × V
CCQ
V
REF
+ 0.04
V
CC
+ 0.30
V
REF
- 0.15
V
CCQ
+ 0.30
V
CCQ
+ 0.60
V
CCQ
+ 0.60
1
2
3
Input leakage current
Addr, CAS#,
RAS#, WE#
CS#, CKE
CK, CK#
DM
I
I
-16
16
μA
-16
-8
-2
-5
16
8
2
5
μA
μA
μA
μA
Output leakage current
Output high current (normal strength)
V
OUT
= v + 0.84V
Output high current (normal strength)
V
OUT
= v - 0.84V
Output high current (half strength)
V
OUT
= V
TT
+ 0.45V
Output high current (half strength)
V
OUT
= V
TT
- 0.45V
Notes:
1. V
REF
is expected to be equal to 0.5*V
CCQ
of the transmitting device, and to track variations in the DC level of the same. Peak to peak noise on V
REF
may not exceed +/-2% of the DC
values.
2. V
TT
is not applied directly to the device. V
TT
is a system supply for signal termination resistors, is expected to be set equal to V
REF
, and must track variations in the DC level of V
REF
.
3. V
ID
is the magnitude of the difference between the input level on CK and the input level of CK#.
4. Industrial grade modules are specified to a DRAM t
CASE
of 85°C and -40°C
ABSOLUTE MAXIMUM RATINGS
I
OZ
I
OH
-16.8
—
mA
I
OL
-16.8
—
mA
V
OH
-9
—
mA
V
OL
9
—
mA
Parameter
Voltage on any in relative to V
SS
Voltage on V
CC
& V
CCQ
supply relative to V
SS
Voltage on V
REF
supply relative to V
SS
Storage temperature
Operating temperature
Power dissipation
Short circuit output current
Notes:
Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceed.
Functional operation should be restricted to recommended operating condition.
Exposing to higher than recommended voltage for extended periods of time could affect device reliability.
Symbol
V
IN
, V
OUT
V
CC
, V
CCQ
V
REF
T
STG
T
A
P
D
I
OS
Value
-0.5 ~ 3.6
-1.0 ~ 3.6
-1.0 ~ 3.6
-55 ~ +150
0 ~ 70
8
50
Units
V
V
V
°C
°C
W
mA
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