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参数资料
| 型号： | W3H128M64E2-533SBM |
| 厂商： | MICROSEMI CORP-PMG MICROELECTRONICS |
| 元件分类： | DRAM |
| 英文描述： | DDR DRAM, PBGA208 |
| 封装： | 16 X 22 MM, 1 MM PITCH, PLASTIC, BGA-208 |
| 文件页数： | 14/31页 |
| 文件大小： | 989K |
| 代理商： | W3H128M64E2-533SBM |
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W3H128M64E-XSBX
21
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
White Electronic Designs
October 2008
Rev. 1
ADVANCED
White Electronic Designs Corp. reserves the right to change products or specications without notice.
PRECHARGE COMMAND
The PRECHARGE command, illustrated in Figure 13, is
used to deactivate the open row in a particular bank or
the open row in all banks. The bank(s) will be available
for a subsequent row activation a specied time (tRP)
after the PRECHARGE command is issued, except in
the case of concurrent auto precharge, where a READ or
WRITE command to a different bank is allowed as long
as it does not interrupt the data transfer in the current
bank and does not violate any other timing parameters.
Once a bank has been precharged, it is in the idle state
and must be activated prior to any READ or WRITE
commands being issued to that bank. A PRECHARGE
command is allowed if there is no open row in that bank
(idle state) or if the previously open row is already in the
process of precharging. However, the precharge period
will be determined by the last PRECHARGE command
issued to the bank.
PRECHARGE OPERATION
Input A10 determines whether one or all banks are to be
precharged, and in the case where only one bank is to be
precharged, inputs BA2–BA0 select the bank. Otherwise
BA2–BA0 are treated as “Don’t Care.”
When all banks are to be precharged, inputs BA2–BA0
are treated as “Don’t Care.” Once a bank has been
precharged, it is in the idle state and must be activated prior
to any READ or WRITE commands being issued to that
bank. tRPA timing applies when the PRECHARGE (ALL)
command is issued, regardless of the number of banks
already open or closed. If a single-bank PRECHARGE
command is issued, tRP timing applies. tRPA (MIN) applies
to all 8-bank DDR2 devices.
SELF REFRESH COMMAND
The SELF REFRESH command can be used to retain
data in the DDR2 SDRAM, even if the rest of the system
is powered down. When in the self refresh mode, the
DDR2 SDRAM retains data without external clocking. All
power supply inputs (including VREF) must be maintained
at valid levels upon entry/exit and during SELF REFRESH
operation.
The SELF REFRESH command is initiated like a
REFRESH command except CKE is LOW. The DLL is
automatically disabled upon entering self refresh and is
automatically enabled upon exiting self refresh (200 clock
CS#
WE#
CAS#
RAS#
CKE
A10
BA0 - BA2
HIGH
ALL BANKS
ONE BANK
BA
ADDRESS
CK
CK#
DON’T CARE
FIGURE 13 – PRECHARGE COMMAND
Note: BA = bank address (if A10 is LOW; otherwise "Don't Care").
cycles must then occur before a READ command can be
issued). The differential clock should remain stable and
meet tCKE specications at least 1 x tCK after entering
self refresh mode. All command and address input signals
except CKE are “Don’t Care” during self refresh.
The procedure for exiting self refresh requires a sequence
of commands. First, the differential clock must be stable
and meet tCK specications at least 1 x tCK prior to CKE
going back HIGH. Once CKE is HIGH (tCLE(MIN) has
been satised with four clock registrations), the DDR2
SDRAM must have NOP or DESELECT commands issued
for tXSNR because time is required for the completion of
any internal refresh in progress. A simple algorithm for
meeting both refresh and DLL requirements is to apply
NOP or DESELECT commands for 200 clock cycles before
applying any other command.
Note: Self refresh not available at military temperature..
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相关代理商/技术参数 |
参数描述 |
|---|---|
| W3H128M64E-400SBI | 制造商:Microsemi Corporation 功能描述:128M X 64 DDR2, 1.8V, 400MHZ, 208PBGA COMMERICAL TEMP. - Bulk |
| W3H128M72E-400SBC | 制造商:Microsemi Corporation 功能描述:128M X 72 DDR2, 1.8V, 400MHZ, 208PBGA COMMERICAL TEMP. - Bulk |
| W3H128M72E-400SBI | 制造商:Microsemi Corporation 功能描述:128M X 72 DDR2, 1.8V, 400MHZ, 208PBGA INDUSTRIAL TEMP. - Bulk 制造商:Microsemi Corporation 功能描述:SDRAM MEMORY |
| W3H128M72E-400SBM | 制造商:Microsemi Corporation 功能描述:128M X 72 DDR2, 1.8V, 400MHZ, 208PBGA MIL-TEMP. - Bulk 制造商:Microsemi Corporation 功能描述:SDRAM MEMORY |
| W3H128M72E-533NBI | 制造商:Microsemi Corporation 功能描述:128M X 72 DDR2, 1.8V, 533MHZ, 208PBGA IND TEMP. - Bulk |
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