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参数资料
| 型号： | W3H128M64E2-533SBM |
| 厂商： | MICROSEMI CORP-PMG MICROELECTRONICS |
| 元件分类： | DRAM |
| 英文描述： | DDR DRAM, PBGA208 |
| 封装： | 16 X 22 MM, 1 MM PITCH, PLASTIC, BGA-208 |
| 文件页数： | 16/31页 |
| 文件大小： | 989K |
| 代理商： | W3H128M64E2-533SBM |
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W3H128M64E-XSBX
23
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
White Electronic Designs
October 2008
Rev. 1
ADVANCED
White Electronic Designs Corp. reserves the right to change products or specications without notice.
BGA THERMAL RESISTANCE
Description
Symbol
Typical
Units
Notes
Junction to Ambient (No Airow)
Theta JA
19.7
°C/W
1
Junction to Ball
Theta JB
20.6
°C/W
1
Junction to Case (Top)
Theta JC
10.8
°C/W
1
Note: These typical thermal resistances are for each DRAM die, if using the total power of the MCP, divide the given values by 4.
Refer to "PBGA Thermal Resistance Correlation" (Application Note) at www.whiteedc.com in the application notes section for modeling conditions.
INPUT DC LOGIC LEVEL
All voltages referenced to VSS
Parameter
Symbol
Min
Max
Unit
Input High (Logic 1) Voltage
VIH(DC)
VREF + 0.1 25
VCC + 0.300
V
Input Low (Logic 0) Voltage
VIL(DC)
-0.300
VREF - 0.125
V
INPUT AC LOGIC LEVEL
All voltages referenced to VSS
Parameter
Symbol
Min
Max
Unit
AC Input High (Logic 1) Voltage DDR2-400 & DDR2-533
VIH(AC)
VREF + 0.250
—
V
AC Input High (Logic 1) Voltage DDR2-667
VIH(AC)
VREF + 0.200
—
V
AC Input Low (Logic 0) Voltage DDR2-400 & DDR2-533
VIL(AC)
—
VREF - 0.250
V
AC Input Low (Logic 0) Voltage DDR2-667
VIL(AC)
—
VREF - 0.200
V
ODT DC ELECTRICAL CHARACTERISTICS
All voltages referenced to VSS
Parameter
Symbol
Min
Nom
Max
Unit
Notes
RTT effective impedance value for 75Ω setting EMR (A6, A2) = 0, 1
RTT1(EFF)
52
75
97
Ω
1
RTT effective impedance value for 150Ω setting EMR (A6, A2) = 1, 0
RTT2(EFF)
105
150
195
Ω
1
RTT effective impedance value for 50Ω setting EMR (A6, A2) = 1, 1
RTT3(EFF)
35
50
65
Ω
1
Deviation of VM with respect to VCCQ/2
VM
-6
6
%
2
Note: 1. RTT1(EFF) and RTT2(EFF) are determined by separately applying VIH(AC) and VIL (AC) to the ball being tested, and then measuring current, I(VIH(AC)), and I(VIL(AC)), respectively.
2. Measure voltage (VM) at tested ball with no load
RTT(EFF) = VIH(AC) - VIL(AC)
I(VIH(AC)) - I(VIL(AC))
VM =
(2 x VM - 1) x 100
VCC
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相关代理商/技术参数 |
参数描述 |
|---|---|
| W3H128M64E-400SBI | 制造商:Microsemi Corporation 功能描述:128M X 64 DDR2, 1.8V, 400MHZ, 208PBGA COMMERICAL TEMP. - Bulk |
| W3H128M72E-400SBC | 制造商:Microsemi Corporation 功能描述:128M X 72 DDR2, 1.8V, 400MHZ, 208PBGA COMMERICAL TEMP. - Bulk |
| W3H128M72E-400SBI | 制造商:Microsemi Corporation 功能描述:128M X 72 DDR2, 1.8V, 400MHZ, 208PBGA INDUSTRIAL TEMP. - Bulk 制造商:Microsemi Corporation 功能描述:SDRAM MEMORY |
| W3H128M72E-400SBM | 制造商:Microsemi Corporation 功能描述:128M X 72 DDR2, 1.8V, 400MHZ, 208PBGA MIL-TEMP. - Bulk 制造商:Microsemi Corporation 功能描述:SDRAM MEMORY |
| W3H128M72E-533NBI | 制造商:Microsemi Corporation 功能描述:128M X 72 DDR2, 1.8V, 533MHZ, 208PBGA IND TEMP. - Bulk |
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