参数资料
型号: W3H128M72E-533NBI
厂商: MICROSEMI CORP-PMG MICROELECTRONICS
元件分类: DRAM
英文描述: 128M X 72 DDR DRAM, 0.5 ns, PBGA208
封装: 16 X 22 MM, 1 MM PITCH, PLASTIC, BGA-208
文件页数: 1/31页
文件大小: 991K
代理商: W3H128M72E-533NBI
W3H128M72E-XNBX
ADVANCED*
1
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
White Electronic Designs
December 2008
Rev. 2
White Electronic Designs Corp. reserves the right to change products or specications without notice.
128M x 72 DDR2 SDRAM 208 PBGA Multi-Chip Package
FEATURES
Data rate = 667, 533, 400 Mb/s
Package:
208 Plastic Ball Grid Array (PBGA), 16 x 22mm
1.0mm pitch
Supply Voltage = 1.8V
Differential data strobe (DQS, DQS#) per byte
Internal, pipelined, double data rate architecture
4-bit prefetch architecture
DLL for alignment of DQ and DQS transitions with
clock signal
Eight internal banks for concurrent operation
(Per DDR2 SDRAM Die)
Programmable Burst lengths: 4 or 8
Auto Refresh and Self Refresh Modes
On Die Termination (ODT)
Adjustable data – output drive strength
Programmable CAS latency: 4, 5 or 6
CK/CK# Termination options available
0 ohm, 20 ohm
Posted CAS additive latency: 0, 1, 2, 3 or 4
Write latency = Read latency - 1* tCK
Commercial, Industrial and Military Temperature
Ranges
Organized as 128M x 72
Weight: W3H128M72E-XNBX - TBD
BENEFITS
56% Space savings vs. FBGA
Reduced part count
50% I/O reduction vs FBGA
Reduced trace lengths for lower parasitic
capacitance
Suitable for hi-reliability applications
* This product is under development, is not qualied or characterized and is subject
to change or cancellation without notice.
Area
5 x 161mm2 = 805mm2
352mm2
56%
5 x 84 balls = 420 balls
208 Balls
50%
S
A
V
I
N
G
S
I/O
Count
W3H128M72E-XNBX
CSP Approach (mm)
84
FBGA
11.5
14.0
22
16
84
FBGA
11.5
84
FBGA
11.5
84
FBGA
11.5
84
FBGA
11.5
FIGURE 1 – DENSITY COMPARISONS
White Electronic Designs
WSH128M72E-XNBX
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相关代理商/技术参数
参数描述
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