参数资料
型号: W3H128M72E-533NBI
厂商: MICROSEMI CORP-PMG MICROELECTRONICS
元件分类: DRAM
英文描述: 128M X 72 DDR DRAM, 0.5 ns, PBGA208
封装: 16 X 22 MM, 1 MM PITCH, PLASTIC, BGA-208
文件页数: 27/31页
文件大小: 991K
代理商: W3H128M72E-533NBI
W3H128M72E-XNBX
5
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
White Electronic Designs
December 2008
Rev. 2
ADVANCED
White Electronic Designs Corp. reserves the right to change products or specications without notice.
TABLE – 1 BALL DESCRIPTIONS
(continued)
A0-A13
Input
Address inputs: Provide the row address for ACTIVE commands, and the column address and auto precharge bit
(A10) for READ/WRITE commands, to select one location out of the memory array in the respective bank. A10
sampled during a PRECHARGE command determines whether the PRECHARGE applies to one bank (A10 LOW,
bank selected by BA2–BA0) or all banks (A10 HIGH) The address inputs also provide the op-code during a LOAD
MODE command.
DQ0-71
I/O
Data input/output: Bidirectional data bus
UDQS, UDQS#
I/O
Data strobe for upper byte: Output with read data, input with write data for source synchronous operation. Edge-
aligned with read data, center-aligned with write data. UDQS# is only used when differential data strobe mode is
enabled via the LOAD MODE command.
LDQS, LDQS#
I/O
Data strobe for lower byte: Output with read data, input with write data for source synchronous operation. Edge-
aligned with read data, center-aligned with write data. LDQS# is only used when differential data strobe mode is
enabled via the LOAD MODE command.
VCC
Supply
Power Supply: I/O + Core; VCCQ is common to VCC
VREF
Supply
SSTL_18 reference voltage.
VSS
Supply
Ground
NC
-
No connect: These balls should be left unconnected.
DNU
-
Future use
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