- 您现在的位置：买卖IC网 > PDF目录276857 > W3HG264M72EER806AD7MG (MICROSEMI CORP-PMG MICROELECTRONICS) 128M X 72 DDR DRAM MODULE, DMA244 PDF资料下载
参数资料
| 型号： | W3HG264M72EER806AD7MG |
| 厂商： | MICROSEMI CORP-PMG MICROELECTRONICS |
| 元件分类： | DRAM |
| 英文描述： | 128M X 72 DDR DRAM MODULE, DMA244 |
| 封装： | ROHS COMPLIANT, MINIDIMM-244 |
| 文件页数： | 11/14页 |
| 文件大小： | 211K |
| 代理商： | W3HG264M72EER806AD7MG |
W3HG264M72EER-AD7
December 2005
Rev. 0
ADVANCED
6
White Electronic Designs Corporation (602) 437-1520 www.wedc.com
White Electronic Designs
DDR2 ICC SPECIFICATIONS AND CONDITIONS
Includes DDR2 SDRAM components only; TA = 0°C, VCC = 1.9V
Symbol Parameter
Condition
806
667
534
403
Unit
ICCO*
Operating one bank
active-precharge;
tCK = tCK(I
CC); tRC = tRC(ICC); tRAS = tRAS MIN(ICC); CKE is HIGH, CS# is
HIGH between valid commands; Address bus inputs are SWITCHING;
Data bus inputs are SWITCHING
TBD
1,525
1,615
1,795
mA
ICC1*
Operating one
bank active-read-
precharge;
IOUT = OmA; BL = 4; CL = CL(ICC); tCK = tCK(I
CC); tRC = tRC(ICC); tRAS = tRAS
MIN(ICC); CKE is HIGH, CS# is HIGH between valid commands; Address
bus inputs are SWITCHING; Data bus inputs are SWITCHING; Data
pattern is sames as ICC4W.
TBD
1,615
1,750
1,930
mA
ICC2P**
Precharge power-
down current;
All banks idle; tCK = tCK(I
CC); CKE is LOW; Other control and address
bus inputs are STABLE; Data bus inputs are FLOATING
TBD
490
mA
ICC2Q**
Precharge quite
standby current;
All banks idle; tCK = tCK(I
CC); CKE is HIGH; CS# is HIGH; Other control
and address bus inputs are STABLE; Data bus inputs are FLOATING
TBD
1,030
1,120
1,300
mA
ICC2N**
Precharge standby
current;
All banks idle; tCK = tCK(I
CC); CKE is HIGH; CS# is HIGH; Other control
and address bus inputs are STABLE; Data bus inputs are SWITCHING
TBD
1,120
1,210
1,390
mA
ICC3P**
Active power-down
current;
All banks open; tCK = tCK(I
CC), CKE is LOW;
Other control and address bus inputs are
STABLE; Data bus inputs are FLOATING
Fast PDN Exit
MRS(12) = 0
TBD
1,030
1,165
1,300
mA
Slow PDN Exit
MRS(12) = 1
TBD
895
985
1,075
mA
ICC3N**
Active standby
current;
All banks open; tCK = tCK(I
CC); tRC = tRC(ICC); tRAS = tRAS MIN(ICC); CKE
is HIGH, CS# is HIGH between valid commands; Other control and
address bus inputs are SWITCHING; Data bus inputs are SWITCHING
TBD
1,210
1,390
1,570
mA
ICC4W*
Operating burst
write current;
All banks open; Continuous burst writes; BL = 4; CL = CL(ICC); AL =
0; tCK = tCK(I
CC); tRC = tRC(ICC); tRAS = tRAS MIN(ICC); CKE is HIGH, CS# is
HIGH between valid commands; Address bus inputs are SWITCHING;
Data bus inputs are SWITCHING
TBD
1,840
2,155
2,470
mA
ICC4R*
Operating burst
read current;
All banks open; Continuous burst reads; TOUT = OmA; BL = 4; CL =
CL(ICC); AL = 0; tCK = tCK(I
CC); tRC = tRC(ICC); tRAS = tRAS MIN(ICC); CKE is
HIGH, CS# is HIGH between valid commands; Address bus inputs are
SWITCHING; Data pattern is same as ICC4W.
TBD
1,840
2,200
2,560
mA
ICC5**
Burst auto refresh
current;
tCK = tCK(I
CC); Refresh command at every tRC(ICC) interval; CKE is HIGH;
CS# is HIGH between valid commands; Other control and address bus
inputs are SWITCHING; Data bus inputs are SWITCHING
TBD
2,515
2,695
2,875
mA
ICC6**
Self refresh current;
CK and CK# at OV; CKE < 0.2V; Other control
and address bus inputs are FLOATING; Data
bus inputs are FLOATING
Normal
TBD
90
mA
ICC7*
Operating bank
interleave read
curent;
All bank interleaving reads; IOUT = OmA; BL = 4; CL = CL(ICC); AL
= tRCD(I
CC) - 1*tCK(ICC); tCK = tCK(ICC); tRC = tRC(ICC); tRRD = tRRD MIN(ICC)
= 1*tCK(I
CC); CKE is HIGH; CS# is HIGH between valid commands;
Address bus inputs are STABLE during DESELECTs; Data bus inputs
are SWITCHING
TBD
2,875
3,235
3,415
mA
Notes:
ICC specication is based on MICRON components. Other DRAM manufacturers specication may be different.
* Value calculated as one module rank in this operating condition, and all other module ranks in ICC2P ( CKE LOW) mode.
** Value calculated reects all module ranks in this operating condition.
相关PDF资料 |
PDF描述 |
|---|---|
| W7NCF01GH21ISBCG | 64M X 16 FLASH 3.3V PROM CARD, 150 ns, UUC |
| W7NCF256H30IS7DG | 16M X 16 FLASH 3.3V PROM CARD, 150 ns, UUC |
| WED3DG7266V7D1-MG | 64M X 72 SYNCHRONOUS DRAM MODULE, ZMA144 |
| WED7G385ATA33XDI25 | 192M X 16 FLASH 3.3V PROM MODULE, DMA144 |
| WMF256K8-120FEI5A | 256K X 8 FLASH 5V PROM, 120 ns, CDFP32 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| W3HG264M72EER806AD7XG | 制造商:WEDC 制造商全称:White Electronic Designs Corporation 功能描述:1GB - 2x64Mx72 DDR2 SDRAM REGISTERED, w/PLL, VLP Mini-DIMM |
| W3HG264M72EER-AD7 | 制造商:WEDC 制造商全称:White Electronic Designs Corporation 功能描述:1GB - 2x64Mx72 DDR2 SDRAM REGISTERED, w/PLL, VLP Mini-DIMM |
| W3HG264M72EERXXXAD7MG | 制造商:WEDC 制造商全称:White Electronic Designs Corporation 功能描述:1GB - 2x64Mx72 DDR2 SDRAM REGISTERED, w/PLL, VLP Mini-DIMM |
| W3HG264M72EERXXXAD7SG | 制造商:WEDC 制造商全称:White Electronic Designs Corporation 功能描述:1GB - 2x64Mx72 DDR2 SDRAM REGISTERED, w/PLL, VLP Mini-DIMM |
| W3HG64M72EER403AD7XG | 制造商:WEDC 制造商全称:White Electronic Designs Corporation 功能描述:512MB - 64Mx72 DDR2 SDRAM REGISTERED, w/PLL, VLP Mini-DIMM |
发布紧急采购，3分钟左右您将得到回复。