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参数资料
| 型号： | W9425G6DH-6I |
| 厂商： | WINBOND ELECTRONICS CORP |
| 元件分类： | DRAM |
| 英文描述： | 16M X 16 DDR DRAM, 0.7 ns, PDSO66 |
| 封装： | 0.400 INCH, 0.65 MM PITCH, ROHS COMPLIANT, TSOP2-66 |
| 文件页数： | 13/53页 |
| 文件大小： | 1817K |
| 代理商： | W9425G6DH-6I |
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W9425G6DH
Publication Release Date:Feb. 12, 2008
- 20 -
Revision A8
Function Truth Table, continued
CURRENT
STATE
CS
RAS CAS
WE
ADDRESS
COMMAND
ACTION
NOTES
H
X
DSL
NOP
->Row active after tWR
L
H
X
NOP
->Row active after tWR
L
H
L
X
BST
ILLEGAL
L
H
L
H
BS, CA, A10
READ/READA
ILLEGAL
3
L
H
L
BS, CA, A10
WRIT/WRITA
ILLEGAL
3
L
H
BS, RA
ACT
ILLEGAL
3
L
H
L
BS, A10
PRE/PREA
ILLEGAL
3
L
H
X
AREF/SELF
ILLEGAL
Write
Recovering
L
Op-Code
MRS/EMRS
ILLEGAL
H
X
DSL
NOP
->Enter precharge after tWR
L
H
X
NOP
->Enter precharge after tWR
L
H
L
X
BST
ILLEGAL
L
H
L
H
BS, CA, A10
READ/READA
ILLEGAL
3
L
H
L
BS, CA, A10
WRIT/WRITA
ILLEGAL
3
L
H
BS, RA
ACT
ILLEGAL
3
L
H
L
BS, A10
PRE/PREA
ILLEGAL
3
L
H
X
AREF/SELF
ILLEGAL
Write
Recovering
with Auto-
precharge
L
Op-Code
MRS/EMRS
ILLEGAL
H
X
DSL
NOP
->Idle after tRC
L
H
X
NOP
->Idle after tRC
L
H
L
X
BST
ILLEGAL
L
H
L
H
X
READ/WRIT
ILLEGAL
L
H
X
ACT/PRE/PREA
ILLEGAL
Refreshing
L
X
AREF/SELF/MRS/EMRS
ILLEGAL
H
X
DSL
NOP
->Row after tMRD
L
H
X
NOP
->Row after tMRD
L
H
L
X
BST
ILLEGAL
L
H
L
X
READ/WRIT
ILLEGAL
Mode
Register
Accessing
L
X
ACT/PRE/PREA/ARE
F/SELF/MRS/EMRS
ILLEGAL
Notes
:
1.
All entries assume that CKE was active (High level) during the preceding clock cycle and the current clock cycle.
2.
Illegal if any bank is not idle.
3.
Illegal to bank in specified states; Function may be legal in the bank indicated by Bank Address (BS), depending on the
state of that bank.
4.
Illegal if tRCD is not satisfied.
5.
Illegal if tRAS is not satisfied.
6.
Must satisfy burst interrupt condition.
7.
Must avoid bus contention, bus turn around, and/or satisfy write recovery requirements.
8.
Must mask preceding data which don’t satisfy tWR
Remark: H = High level, L = Low level, X = High or Low level (Don’t care), V = Valid data
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| W946432AD-5 | 2M X 32 DDR DRAM, 0.1 ns, PQFP100 |
| W9464G6IH-6 | 4M X 16 DDR DRAM, 0.7 ns, PDSO66 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| W9425G6EH | 制造商:WINBOND 制造商全称:Winbond 功能描述:4 M 】 4 BANKS 】 16 BITS DDR SDRAM |
| W9425G6EH_0812 | 制造商:WINBOND 制造商全称:Winbond 功能描述:4 M × 4 BANKS × 16 BITS DDR SDRAM |
| W9425G6EH-5 | 功能描述:IC DDR-400 SDRAM 256MB 66TSSOPII RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:1,000 系列:- 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:4K (512 x 8) 速度:400kHz 接口:I²C，2 线串口 电源电压:2.7 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-SOIC（0.173"，4.40mm 宽） 供应商设备封装:8-MFP 包装:带卷 (TR) |
| W9425G6EH-5I | 制造商:Winbond Electronics Corp 功能描述: |
| W9425G6JB-5 | 制造商:Winbond Electronics Corp 功能描述:DRAM Chip DDR SDRAM 256M-Bit 16Mx16 2.5V 60-Pin TFBGA 制造商:Winbond Electronics 功能描述:IC MEMORY 制造商:Winbond Electronics Corp 功能描述:IC MEMORY 制造商:Winbond 功能描述:16MX16,256Mb DDRI DRAM ,200MHZ, BGA |
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