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参数资料
| 型号： | W965L6ABN80I |
| 厂商： | WINBOND ELECTRONICS CORP |
| 元件分类： | SRAM |
| 英文描述： | 2M X 16 PSEUDO STATIC RAM, 75 ns, PBGA48 |
| 封装： | 6 X 8 MM, 0.75 MM PITCH, TFBGA-48 |
| 文件页数： | 5/30页 |
| 文件大小： | 1019K |
| 代理商： | W965L6ABN80I |
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W965L6ABN
AC Characteristics, Continued
Power Down and Power Down Program Parameters
-70
-80
PARAMETER
SYM.
Min.
Max.
Min.
Max.
UNIT NOTES
CE2 Low Setup Time for Power Down Entry
tCSP
10
-
10
-
nS
CE2 Low Hold Time after Power Down Entry
tC2LP
70
-
80
-
nS
CE1 High Setup Time following CE2 High after
Power Down Exit
tCHS
10
-
10
-
nS
CE1 High to PE Low Setup Time
tEPS
70
-
80
-
nS
*1
Note: *1: Applicable to Power Down Program
Other Timing Parameters
-70
-80
PARAMETER
SYM.
Min.
Max.
Min.
Max.
UNIT NOTES
CE1 High to OE Invalid Time for Standby Entry
tCHOX
10
-
10
-
nS
CE1 High to WE Invalid Time for Standby Entry tCHWX
10
-
10
-
nS
*1
CE2 Low Hold Time after Power-up
tC2LH
50
-
50
-
S
*2
CE2 High Hold Time after Power-up
tC2HL
50
-
50
-
S
*3
CE1 High Hold Time following CE2 High after
Power-up
tCHH
350
-
350
-
S
*2
Input Transition Time
tT
1
25
1
25
nS
*4
Notes:
*1: Some data might be written into any address location if tCHWX(min.) is not satisfied.
*2: Must satisfy tCHH(min.) after tC2LH(min.).
*3: Requires Power Down mode entry and exit after tC2HL.
*4: The Input Transition Time (tT) at AC testing is 5 nS as shown in below. If actual tT is longer than 5 nS, it may violate
AC specified of some timing parameters.
AC Test Conditions
SYMBOL
DESCRIPTION
TEST SETUP
VALUE
UNIT
NOTE
VDD = 2.7V to 3.3V
2.3
VIH
Input High Level
VDD = 2.3V to 2.7V
2.0
V
VDD = 2.7V to 3.3V
0.4
VIL
Input Low Level
VDD = 2.3V to 2.7V
0.4
V
VDD = 2.7V to 3.3V
1.3
VREF
Input Timing Measurement Level
VDD = 2.3V to 2.7V
1.1
V
TT
Input Transition Time
Between VIL and VIH
5
nS
Publication Release Date: March 14, 2003
- 13 -
Revision A1
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