- 您现在的位置：买卖IC网 > PDF目录276902 > W972GG8JB (WINBOND ELECTRONICS CORP) DDR DRAM, PBGA60 PDF资料下载
参数资料
| 型号： | W972GG8JB |
| 厂商： | WINBOND ELECTRONICS CORP |
| 元件分类： | DRAM |
| 英文描述： | DDR DRAM, PBGA60 |
| 封装： | 11.5 X 11 MM, ROHS COMPLIANT, WBGA-60 |
| 文件页数： | 24/86页 |
| 文件大小： | 1466K |
| 代理商： | W972GG8JB |
第1页第2页第3页第4页第5页第6页第7页第8页第9页第10页第11页第12页第13页第14页第15页第16页第17页第18页第19页第20页第21页第22页第23页当前第24页第25页第26页第27页第28页第29页第30页第31页第32页第33页第34页第35页第36页第37页第38页第39页第40页第41页第42页第43页第44页第45页第46页第47页第48页第49页第50页第51页第52页第53页第54页第55页第56页第57页第58页第59页第60页第61页第62页第63页第64页第65页第66页第67页第68页第69页第70页第71页第72页第73页第74页第75页第76页第77页第78页第79页第80页第81页第82页第83页第84页第85页第86页
W972GG8JB
Publication Release Date: Feb. 18, 2011
- 30 -
Revision A02
7.9.1
Power Down Entry
Two types of Power Down Mode can be performed on the device: Precharge Power Down Mode and
Active Power Down Mode.
If power down occurs when all banks are idle, this mode is referred to as Precharge Power Down; if
power down occurs when there is a row active in any bank, this mode is referred to as Active Power
Down. Entering power down deactivates the input and output buffers, excluding CLK, CLK , ODT and
CKE. Also the DLL is disabled upon entering Precharge Power Down or slow exit Active Power Down,
but the DLL is kept enabled during fast exit Active Power Down.
In power down mode, CKE LOW and a stable clock signal must be maintained at the inputs of the
DDR2 SDRAM, and ODT
should be in a valid state but all other input signals are “Dont Care”. CKE
LOW must be maintained until tCKE has been satisfied. Maximum power down duration is limited by
the refresh requirements of the device, which allows a maximum of 9 x tREFI if maximum posting of
REF is utilized immediately before entering power down. (Example timing waveforms refer to 10.30 to
10.31 Active and Precharged Power Down Mode Entry and Exit diagram in Chapter 10)
7.9.2
Power Down Exit
The power-down state is synchronously exited when CKE is registered HIGH (along with a NOP or
Deselect command). CKE high must be maintained until tCKE has been satisfied. A valid, executable
command can be applied with power-down exit latency, tXP, tXARD, or tXARDS, after CKE goes HIGH.
Power-down exit latency is defined at AC Characteristics table of this data sheet.
7.10 Input clock frequency change during precharge power down
DDR2 SDRAM input clock frequency can be changed under following condition:
DDR2 SDRAM is in precharged power down mode. ODT must be turned off and CKE must be at logic
LOW level. A minimum of 2 clocks must be waited after CKE goes LOW before clock frequency may
change. SDRAM input clock frequency is allowed to change only within minimum and maximum
operating frequency specified for the particular speed grade. During input clock frequency change,
ODT and CKE must be held at stable LOW levels.
Once input clock frequency is changed, stable new clocks must be provided to DRAM before
precharge power down may be exited and DLL must be RESET via MRS command after precharge
power down exit. Depending on new clock frequency an additional MRS or EMRS command may
need to be issued to appropriately set the WR, CL etc
…
During DLL re-lock period, ODT must remain off. After the DLL lock time, the DRAM is ready to
operate with new clock frequency. (Example timing waveform refer to 10.32 Clock frequency change
in precharge Power Down mode diagram in Chapter 10)
相关PDF资料 |
PDF描述 |
|---|---|
| W7NCF01GH31CS7BG | 64M X 16 FLASH 3.3V PROM CARD, 150 ns, UUC |
| W7NCF01GH31IS3EG | 64M X 16 FLASH 3.3V PROM CARD, 150 ns, UUC |
| W7NCF08GH21IS3FG | 512M X 16 FLASH 3.3V PROM CARD, 150 ns, UUC |
| W7NCF08GH21IS8JG | 512M X 16 FLASH 3.3V PROM CARD, 150 ns, UUC |
| W7NCF08GH21ISAEG | 512M X 16 FLASH 3.3V PROM CARD, 150 ns, UUC |
相关代理商/技术参数 |
参数描述 |
|---|---|
| W972GG8JB-18 | 制造商:Winbond Electronics Corp 功能描述:IC DDR2 SDRAM 2GBIT 1.875NS BGA |
| W972GG8JB-25 | 制造商:Winbond Electronics Corp 功能描述:2GMB DDRII 制造商:Winbond Electronics Corp 功能描述:IC DDR2 SDRAM 2GBIT 2.5NS 制造商:Winbond Electronics Corp 功能描述:IC DDR2 SDRAM 2GBIT 2.5NS 60WBGA |
| W972GG8JB-25I | 制造商:Winbond Electronics Corp 功能描述:IC DDR2 SDRAM 2GBIT 2.5NS 制造商:Winbond Electronics Corp 功能描述:IC DDR2 SDRAM 2GBIT 2.5NS 80WBGA |
| W972GG8JB-3 | 制造商:Winbond Electronics Corp 功能描述:DRAM Chip DDR2 SDRAM 2G-Bit 256Mx8 1.8V 60-Pin WBGA 制造商:Winbond Electronics Corp 功能描述:IC DDR2 SDRAM 2GBIT 3NS |
| W9751G6IB-25 | 功能描述:IC DDR2-800 SDRAM 512MB 84-WBGA RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:1,000 系列:- 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:4K (512 x 8) 速度:400kHz 接口:I²C，2 线串口 电源电压:2.7 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-SOIC（0.173"，4.40mm 宽） 供应商设备封装:8-MFP 包装:带卷 (TR) |
发布紧急采购，3分钟左右您将得到回复。