- 您现在的位置：买卖IC网 > PDF目录276902 > W972GG8JB (WINBOND ELECTRONICS CORP) DDR DRAM, PBGA60 PDF资料下载
参数资料
| 型号： | W972GG8JB |
| 厂商： | WINBOND ELECTRONICS CORP |
| 元件分类： | DRAM |
| 英文描述： | DDR DRAM, PBGA60 |
| 封装： | 11.5 X 11 MM, ROHS COMPLIANT, WBGA-60 |
| 文件页数： | 26/86页 |
| 文件大小： | 1466K |
| 代理商： | W972GG8JB |
第1页第2页第3页第4页第5页第6页第7页第8页第9页第10页第11页第12页第13页第14页第15页第16页第17页第18页第19页第20页第21页第22页第23页第24页第25页当前第26页第27页第28页第29页第30页第31页第32页第33页第34页第35页第36页第37页第38页第39页第40页第41页第42页第43页第44页第45页第46页第47页第48页第49页第50页第51页第52页第53页第54页第55页第56页第57页第58页第59页第60页第61页第62页第63页第64页第65页第66页第67页第68页第69页第70页第71页第72页第73页第74页第75页第76页第77页第78页第79页第80页第81页第82页第83页第84页第85页第86页
W972GG8JB
Publication Release Date: Feb. 18, 2011
- 32 -
Revision A02
8.2
Clock Enable (CKE) Truth Table for Synchronous Transitions
CURRENT
STATE
2
CKE
COMMAND (N)
3
RAS , CAS , WE , CS
ACTION (N)
3
NOTES
Previous Cycle
1
(N-1)
Current Cycle
1
(N)
Power Down
L
X
Maintain Power Down
11, 12, 13
L
H
DESELECT or NOP
Power Down Exit
4, 8, 11, 12
Self Refresh
L
X
Maintain Power Down
11, 13, 14
L
H
DESELECT or NOP
Self Refresh Exit
4, 5, 9, 14
Bank(s) Active
H
L
DESELECT or NOP
Active Power Down
Entry
4, 8, 10, 11,
12
All Banks Idle
H
L
DESELECT or NOP
Precharge Power Down
Entry
4, 8, 10, 11,
12
H
L
REFRESH
Self Refresh Entry
6, 9, 11, 12
H
Refer to the Command Truth Table
7
Notes:
1.
CKE (N) is the logic state of CKE at clock edge N; CKE (N
–1) was the state of CKE at the previous clock edge.
2.
Current state is the state of the DDR2 SDRAM immediately prior to clock edge N.
3.
COMMAND (N) is the command registered at clock edge N, and ACTION (N) is a result of COMMAND (N).
4.
All states and sequences not shown are illegal or reserved unless explicitly described elsewhere in this document.
5.
On Self Refresh Exit DESELECT or NOP commands must be issued on every clock edge occurring during the tXSNR period.
Read commands may be issued only after tXSRD (200 clocks) is satisfied.
6.
Self Refresh mode can only be entered from the All Banks Idle state.
7.
Must be a legal command as defined in the Command Truth Table.
8.
Valid commands for Power Down Entry and Exit are NOP and DESELECT only.
9.
Valid commands for Self Refresh Exit are NOP and DESELECT only.
10. Power Down and Self Refresh can not be entered while Read or Write operations, (Extended) Mode Register Set
operations or Precharge operations are in progress. See section 7.9 "Power Down Mode" and section 7.3.7/7.3.8 "Self
Refresh Entry/Exit Command" for a detailed list of restrictions.
11. tCKEmin of 3 clocks means CKE must be registered on three consecutive positive clock edges. CKE must remain at the
valid input level the entire time it takes to achieve the 3 clocks of registration. Thus, after any CKE transition, CKE may not
transition from its valid level during the time period of tIS + 2 x tCK + tIH.
12. The Power Down does not perform any refresh operations. The duration of Power Down Mode is therefore limited by the
refresh requirements outlined in section 7.9.
13.
“X” means “dont care (including floating around VREF)” in Self Refresh and Power Down. However ODT must be driven
high or low in Power Down if the ODT function is enabled
(Bit A2 or A6 set to “1” in EMR (1)).
14. VREF must be maintained during Self Refresh operation.
15. The state of ODT does not affect the states described in this table. The ODT function is not available during Self Refresh.
See section 7.2.4.
16. CKE must be maintained HIGH while the SDRAM is in OCD calibration mode.
8.3
Data Mask (DM) Truth Table
FUNCTION
DM
DQS
NOTE
Write enable
L
Valid
1
Write inhibit
H
X
1
Note:
1. Used to mask write data, provided coincident with the corresponding data.
相关PDF资料 |
PDF描述 |
|---|---|
| W7NCF01GH31CS7BG | 64M X 16 FLASH 3.3V PROM CARD, 150 ns, UUC |
| W7NCF01GH31IS3EG | 64M X 16 FLASH 3.3V PROM CARD, 150 ns, UUC |
| W7NCF08GH21IS3FG | 512M X 16 FLASH 3.3V PROM CARD, 150 ns, UUC |
| W7NCF08GH21IS8JG | 512M X 16 FLASH 3.3V PROM CARD, 150 ns, UUC |
| W7NCF08GH21ISAEG | 512M X 16 FLASH 3.3V PROM CARD, 150 ns, UUC |
相关代理商/技术参数 |
参数描述 |
|---|---|
| W972GG8JB-18 | 制造商:Winbond Electronics Corp 功能描述:IC DDR2 SDRAM 2GBIT 1.875NS BGA |
| W972GG8JB-25 | 制造商:Winbond Electronics Corp 功能描述:2GMB DDRII 制造商:Winbond Electronics Corp 功能描述:IC DDR2 SDRAM 2GBIT 2.5NS 制造商:Winbond Electronics Corp 功能描述:IC DDR2 SDRAM 2GBIT 2.5NS 60WBGA |
| W972GG8JB-25I | 制造商:Winbond Electronics Corp 功能描述:IC DDR2 SDRAM 2GBIT 2.5NS 制造商:Winbond Electronics Corp 功能描述:IC DDR2 SDRAM 2GBIT 2.5NS 80WBGA |
| W972GG8JB-3 | 制造商:Winbond Electronics Corp 功能描述:DRAM Chip DDR2 SDRAM 2G-Bit 256Mx8 1.8V 60-Pin WBGA 制造商:Winbond Electronics Corp 功能描述:IC DDR2 SDRAM 2GBIT 3NS |
| W9751G6IB-25 | 功能描述:IC DDR2-800 SDRAM 512MB 84-WBGA RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:1,000 系列:- 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:4K (512 x 8) 速度:400kHz 接口:I²C，2 线串口 电源电压:2.7 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-SOIC（0.173"，4.40mm 宽） 供应商设备封装:8-MFP 包装:带卷 (TR) |
发布紧急采购，3分钟左右您将得到回复。