- 您现在的位置：买卖IC网 > PDF目录361907 > WMS512K8BV-17E 512Kx8 Monolithic SRAM(512Kx8单片静态RAM（BiCMOS,存取时间17ns）) PDF资料下载
参数资料
| 型号： | WMS512K8BV-17E |
| 英文描述： | 512Kx8 Monolithic SRAM(512Kx8单片静态RAM（BiCMOS,存取时间17ns）) |
| 中文描述： | 512Kx8单片的SRAM（512Kx8单片静态随机存储器（BiCMOS工艺，存取时间17ns）） |
| 文件页数： | 2/8页 |
| 文件大小： | 109K |
| 代理商： | WMS512K8BV-17E |
2
White Electronic Designs Corporation Phoenix, AZ (602) 437-1520
WMS512K8BV-XXXE
TRUTH TABLE
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Min
Max
Unit
°
C
°
C
V
°
C
V
Operating Temperature
T
A
-55
+125
Storage Temperature
T
STG
-65
+150
Signal Voltage Relative to GND
V
G
-0.5
4.6
Junction Temperature
T
J
150
Supply Voltage
V
CC
-0.5
4.6
CS
H
L
L
L
OE
X
L
X
H
WE
X
H
L
H
Mode
Standby
Read
Write
Out Disable
Data I/O
High Z
Data Out
Data In
High Z
Power
Standby
Active
Active
Active
RECOMMENDED OPERATING CONDITIONS
Parameter
Symbol
Condition
Max
Unit
Input capacitance
C
IN
V
IN
= 0V, f = 1.0MHz
12
pF
Output capacitance
C
OUT
V
OUT
= 0V, f = 1.0MHz
12
pF
This parameter is guaranteed by design but not tested.
Parameter
Supply Voltage
Input High Voltage
Input Low Voltage
Operating Temp. (Mil.)
Symbol
V
CC
V
IH
V
IL
T
A
Min
3.0
2.2
-0.3
-55
Max
3.6
Unit
V
V
V
°
C
V
CC
+ 0.3
+0.8
+125
CAPACITANCE
(T
A
= +25
°
C)
DC CHARACTERISTICS
(V
CC
= 3.3V, GND = 0V, T
A
= -55
°
C to +125
°
C)
Parameter
Sym
Conditions
Units
Min
Max
10
10
120
15
0.4
Input Leakage Current
Output Leakage Current
Operating Supply Current
Standby Current
Output Low Voltage
Output High Voltage
NOTE: DC test conditions: V
IH
= V
CC
-0.3V, V
IL
= 0.3V
I
LI
I
LO
I
CC
I
SB
V
OL
V
OH
V
CC
= 5.5, V
IN
= GND to V
CC
CS = V
IH
, OE = V
IH
, V
OUT
= GND to V
CC
CS = V
IL
, OE = V
IH
, f = 5MHz, Vcc = 5.5
CS = V
IH
, OE = V
IH
, f = 5MHz, Vcc = 5.5
I
OL
= 8mA
I
OH
= -4.0mA
μ
A
μ
A
mA
mA
V
V
2.4
相关PDF资料 |
PDF描述 |
|---|---|
| WMS512K8BV-20E | 512Kx8 Monolithic SRAM(512Kx8单片静态RAM（BiCMOS,存取时间20ns）) |
| WMS512K8LV-85DEIEA | 512Kx8 MONOLITHIC SRAM |
| WMS512K8LV-85DEME | 512Kx8 MONOLITHIC SRAM |
| WMS512K8LV-85DEMEA | 512Kx8 MONOLITHIC SRAM |
| WMS512K8LV-100CCE | 512Kx8 MONOLITHIC SRAM |
相关代理商/技术参数 |
参数描述 |
|---|---|
| WMS512K8BV-17FCE | 制造商:未知厂家 制造商全称:未知厂家 功能描述:SRAM|512KX8|BICMOS-TTL|FP|36PIN|CERAMIC |
| WMS512K8BV-17FCEA | 制造商:WEDC 制造商全称:White Electronic Designs Corporation 功能描述:512Kx8 MONOLITHIC SRAM |
| WMS512K8BV-17FECE | 制造商:未知厂家 制造商全称:未知厂家 功能描述:SRAM|512KX8|BICMOS-TTL|FP|32PIN|CERAMIC |
| WMS512K8BV-17FECEA | 制造商:WEDC 制造商全称:White Electronic Designs Corporation 功能描述:512Kx8 MONOLITHIC SRAM |
| WMS512K8BV-17FEIE | 制造商:WEDC 制造商全称:White Electronic Designs Corporation 功能描述:512Kx8 MONOLITHIC SRAM |
发布紧急采购，3分钟左右您将得到回复。