参数资料
型号: WMS512K8V-20FFCA
元件分类: SRAM
英文描述: 512Kx8 MONOLITHIC SRAM
中文描述: 512Kx8整装静态存储器
文件页数: 2/9页
文件大小: 287K
代理商: WMS512K8V-20FFCA
2
White Electronic Designs Corporation (602) 437-1520 www.wedc.com
White Electronic Designs
WMS512K8V-XXX
October 2004
Rev. 8
DC CHARACTERISTICS - CMOS COMPATIBLE
V
CC
= 5.0V, GND
= 0V, -55°C
T
A
125°C
Symbol
Conditions
I
LI
V
CC
= 3.6, V
IN
= GND to V
CC
I
LO
CS# = V
IH
, OE# = V
IH
, V
OUT
= GND to V
CC
I
CC
CS# = V
IH
, OE# = V
IH
, f = 5MHz, V
CC
= 3.6
I
SS
CS# = V
IH
, OE# = V
IH
, f = 5MHz, V
CC
= 3.6
V
OL
I
OL
= 4.0mA
V
OH
I
OH
= -4.0mA
Parameter
Input Leakage Current
Output Leakage Current
Operating Supply Current
Standby Current
Output Low Voltage
Output High Voltage
Min
Max
10
10
100
50
0.4
Unit
μA
μA
mA
mA
V
V
2.4
RECOMMENDED OPERATING CONDITIONS
Parameter
Symbol
Supply Voltage
V
CC
Input High Voltage
Input Low Voltage
Operating Temp. (Mil)
Min
3.0
2.2
-0.3
-55
Max
3.6
Unit
V
V
V
°C
V
IH
V
IL
T
A
V
CC
+ 0.3
+0.8
+125
CAPACITANCE
T
A
= +25°C
Symbol
C
IN
V
IN
= 0 V, f = 1.0 MHz
C
OUT
V
OUT
= 0 V, f = 1.0 MHz
Parameter
Input capacitance
Output capacitance
This parameter is guaranteed by design but not tested.
Conditions
Max
12
12
Unit
pF
pF
ABSOLUTE MAXIMUM RATINGS
Parameter
Operating Temperature
Storage Temperature
Signal Voltage Range to GND
Junction Temperature
Supply Voltage
Symbol
T
A
T
STG
V
G
T
J
V
CC
Min
-55
-65
-0.5
Max
+125
+150
4.6
150
4.6
Unit
°C
°C
V
°C
V
-0.5
TRUTH TABLE
WE#
MODE
X
Standby
H
Read
L
Write
H
Out Disable
CS#
H
L
L
L
OE#
X
L
X
H
DATA I/O
High Z
Data Out
Data In
High Z
POWER
Standby
Active
Active
Acvive
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