- 您现在的位置：买卖IC网 > PDF目录140405 > WS1M32-100G3C (WHITE ELECTRONIC DESIGNS CORP) 1M X 32 MULTI DEVICE SRAM MODULE, 100 ns, CQFP84 PDF资料下载
参数资料
| 型号： | WS1M32-100G3C |
| 厂商： | WHITE ELECTRONIC DESIGNS CORP |
| 元件分类： | SRAM |
| 英文描述： | 1M X 32 MULTI DEVICE SRAM MODULE, 100 ns, CQFP84 |
| 封装： | CERAMIC, QFP-84 |
| 文件页数： | 3/6页 |
| 文件大小： | 329K |
| 代理商： | WS1M32-100G3C |
WS1M32-XG3X
3
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
White Electronic Designs
White Electronic Designs Corp. reserves the right to change products or specications without notice.
February, 2001
Rev. 5
PRELIMINARY
IOH
Current Source
D.U.T.
Ceff ≈ 50 pf
IOL
VZ ≈ 1.5V
(Bipolar Supply)
Current Source
AC TEST CONDITIONS
Parameter
Typ
Unit
Input Pulse Levels
VIL = 0, VIH = 3.0
V
Input Rise and Fall
5
ns
Input and Output Reference Level
1.5
V
Output Timing Reference Level
1.5
V
NOTES:
VZ is programmable from -2V to +7V.
IOL & IOH programmable from 0 to 16mA.
Tester Impedance Z0 = 75Ω.
VZ is typically the midpoint of VOH and VOL.
IOL & IOH are adjusted to simulate a typical resistive load circuit.
ATE tester includes jig capacitance.
AC CHARACTERISTICS
VCC = 5.0V, GND = 0V, -55°C ≤ TA ≤ +125°C
Parameter
Symbol
-70
-85
-100
-120
Units
Read Cycle
Min
Max
Min
Max
Min
Max
Min
Max
Read Cycle Time
tRC
70
85
100
120
ns
Address Access Time
tAA
70
85
100
120
ns
Output Hold from Address Change
tOH
5555
ns
Chip Select Access Time
tACS
70
85
100
120
ns
Output Enable to Output Valid
tOE
35
40
50
60
ns
Chip Select to Output in Low Z
tCLZ1
10
ns
Output Enable to Output in Low Z
tOLZ1
5555
ns
Chip Disable to Output in High Z
tCHZ1
25
35
ns
Output Disable to Output in High Z
tOHZ1
25
35
ns
1. This parameter is guaranteed by design but not tested.
AC CHARACTERISTICS
VCC = 5.0V, GND = 0V, -55°C ≤ TA ≤ +125°C
Parameter
Symbol
-70
-85
-100
-120
Units
Write Cycle
Min
Max
Min
Max
Min
Max
Min
Max
Write Cycle Time
tWC
70
85
100
120
ns
Chip Select to End of Write
tCW
60
75
80
100
ns
Address Valid to End of Write
tAW
60
75
80
100
ns
Data Valid to End of Write
tDW
30
40
ns
Write Pulse Width
tWP
50
60
ns
Address Setup Time
tAS
0000
ns
Address Hold Time
tAH
5555
ns
Output Active from End of Write
tOW1
5555
ns
Write Enable to Output in High Z
tWHZ1
25
35
ns
Data Hold Time
tDH
0000
ns
1. This parameter is guaranteed by design but not tested.
AC TEST CIRCUIT
相关PDF资料 |
PDF描述 |
|---|---|
| W29C040-90BN | 512K X 8 FLASH 5V PROM, 90 ns, PDIP32 |
| W29C040T90BN | 512K X 8 FLASH 5V PROM, 90 ns, PDSO32 |
| WMF512K8-60CLC5A | 512K X 8 FLASH 5V PROM, 60 ns, CQCC32 |
| WF512K32-70G2LC5 | 512K X 32 FLASH 5V PROM MODULE, 70 ns, CQFP68 |
| W3E32M72S-200BC | 32M X 72 DDR DRAM, 0.8 ns, PBGA219 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| WS1M32-17G3C | 制造商:Microsemi Corporation 功能描述:1M X 32 SRAM MODULE, 5V, 17NS, 84 CQFP 1.285" SQ., COMMERCIA - Bulk 制造商:White Electronic Designs 功能描述:1M X 32 SRAM MODULE, 5V, 17NS, 84 CQFP 1.285" SQ., COMMERCIA - Bulk |
| WS1M32-17G3CA | 制造商:未知厂家 制造商全称:未知厂家 功能描述:1Mx32 SRAM MODULE |
| WS1M32-17G3I | 制造商:Microsemi Corporation 功能描述:1M X 32 SRAM MODULE, 5V, 17NS, 84 CQFP 1.285" SQ., INDUSTRIA - Bulk 制造商:White Electronic Designs 功能描述:1M X 32 SRAM MODULE, 5V, 17NS, 84 CQFP 1.285" SQ., INDUSTRIA - Bulk |
| WS1M32-17G3IA | 制造商:未知厂家 制造商全称:未知厂家 功能描述:1Mx32 SRAM MODULE |
| WS1M32-17G3M | 制造商:Microsemi Corporation 功能描述:1M X 32 SRAM MODULE, 5V, 17NS, 84 CQFP 1.285" SQ., MIL-SCREE - Bulk 制造商:White Electronic Designs 功能描述:1M X 32 SRAM MODULE, 5V, 17NS, 84 CQFP 1.285" SQ., MIL-SCREE - Bulk |
发布紧急采购，3分钟左右您将得到回复。