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参数资料
| 型号： | WS512K32NV-70HC |
| 厂商： | WHITE ELECTRONIC DESIGNS CORP |
| 元件分类： | SRAM |
| 英文描述： | 512K X 32 MULTI DEVICE SRAM MODULE, 70 ns, CPGA66 |
| 封装： | 1.185 X 1.185 INCH, CERAMIC, HIP-66 |
| 文件页数： | 3/8页 |
| 文件大小： | 378K |
| 代理商： | WS512K32NV-70HC |
3
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
White Electronic Designs
WS512K32V-XXX
February 2000
Rev. 2
ADVANCED
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Min
Max
Unit
Operating Temperature
TA
-55
+125
°C
Storage Temperature
TSTG
-65
+150
°C
Signal Voltage Relative to GND
VG
-0.5
VCC +0.5
V
Junction Temperature
TJ
150
°C
Supply Voltage
VCC
-0.5
4.6
V
RECOMMENDED OPERATING CONDITIONS
Parameter
Symbol
Min
Max
Unit
Supply Voltage
VCC
3.0
3.6
V
Input High Voltage
VIH
2.2
VCC + 0.3
V
Input Low Voltage
VIL
-0.3
+0.8
V
Operating Temperature (Mil)
TA
-0.5
+125
°C
TRUTH TABLE
CS#
OE#
WE#
Mode
Data I/O
Power
H
X
Standby
High Z
Standby
L
H
Read
Data Out
Active
L
H
Out Disable
High Z
Active
L
X
L
Write
Data In
Active
CAPACITANCE
TA = +25°C
Parameter
Symbol
Conditions
Max Unit
OE# capacitance
COE
VIN = 0V, f = 1.0 MHz
50
pF
WE1-4# capacitance
HIP (PGA)
CWE
VIN = 0V, f = 1.0 MHz
20
pF
CQFP G2U
15
CS# capacitance
CCS
VIN = 0V, f = 1.0 MHz
20
pF
Data# I/O capacitance
CI/O
VI/O = 0V, f = 1.0 MHz
20
pF
Address input capacitance
CAD
VIN = 0V, f = 1.0 MHz
50
pF
This parameter is guaranteed by design but not tested.
DC CHARACTERISTICS
VCC = 5.0V, VSS = 0V, -55°C ≤ TA ≤ +125°C
Parameter
Sym
Conditions
Units
Min
Max
Input Leakage Current
ILI
VCC = 3.6, VIN = GND to VCC
10
μA
Output Leakage Current
ILO
CS# = VIH, OE# = VIH, VOUT = GND to VCC
10
μA
Operating Supply Current
ICC x 32
CS# = VIL, OE# = VIH, f = 5MHz, VCC = 3.6
100
mA
Standby Current
ISB
CS# = VIH, OE# = VIH, f = 5MHz, VCC = 3.6
2.0
mA
Output Low Voltage
VOL
IOL = 2.1mA, VCC = 3.0
0.4
V
Output High Voltage
VOH
IOH = -1.0mA, VCC = 3.0
2.4
V
NOTE: DC test conditions: VIH = VCC -0.3V, VIL = 0.3V.
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