参数资料
型号: WS512K32V-15G1UC
厂商: WHITE ELECTRONIC DESIGNS CORP
元件分类: SRAM
英文描述: 512K X 32 MULTI DEVICE SRAM MODULE, 15 ns, CQFP68
封装: 23.90 MM, LOW PROFILE, CERAMIC, QFP-68
文件页数: 4/8页
文件大小: 154K
代理商: WS512K32V-15G1UC
4
White Electronic Designs Corporation Phoenix AZ (602) 437-1520
White Electronic Designs
WS512K32V-XXX
AC TEST CIRCUIT
Notes:
VZ is programmable from -2V to +7V.
IOL & IOH programmable from 0 to 16mA.
Tester Impedance Z0 = 75W.
VZ is typically the midpoint of VOH and VOL.
IOL & IOH are adjusted to simulate a typical resistive load circuit.
ATE tester includes jig capacitance.
AC TEST CONDITIONS
Parameter
Typ
Unit
Input Pulse Levels
VIL = 0, VIH = 2.5
V
Input Rise and Fall
5
ns
InputandOutputReferenceLevel
1.5
V
Output Timing Reference Level
1.5
V
AC CHARACTERISTICS
(VCC = 3.3V, TA= -55°C TO +125°C)
Parameter
Symbol
-15
-17
-20
Units
Read Cycle
Min
Max
Min
Max
Min
Max
Read Cycle Time
tRC
15
17
20
n s
Address Access Time
t AA
15
17
20
n s
Output Hold from Address Change
tOH
00
0
n s
Chip Select Access Time
t ACS
15
17
20
n s
Output Enable to Output Valid
tOE
88
10
n s
Chip Select to Output in Low Z
tCLZ1
11
1
n s
Output Enable to Output in Low Z
tOLZ1
00
0
n s
Chip Disable to Output in High Z
tCHZ1
88
10
n s
Output Disable to Output in High Z
tOHZ1
88
10
n s
AC CHARACTERISTICS
(VCC = 3.3V, TA= -55°C TO +125°C)
Parameter
Symbol
-15
-17
-20
Units
Write Cycle
Min
Max
Min
Max
Min
Max
Write Cycle Time
tWC
15
17
20
n s
Chip Select to End of Write
tCW
12
14
n s
Address Valid to End of Write
t AW
12
14
n s
Data Valid to End of Write
tDW
99
10
n s
Write Pulse Width
t WP
12
14
n s
Address Setup Time
t AS
000
n s
Address Hold Time
t AH
000
n s
Output Active from End of Write
tOW1
233
n s
Write Enable to Output in High Z
tWHZ1
88
9
n s
Data Hold Time
tDH
000
n s
1. This parameter is guaranteed by design but not tested.
Current Source
IOL
IOH
Ceff = 50 pf
D.U.T.
VZ
≈ 1.5V
(Bipolar Supply)
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