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参数资料
| 型号： | WS57C45-45TMB |
| 元件分类： | PROM |
| 英文描述： | 2K X 8 UVPROM, 45 ns, CDIP24 |
| 封装： | CERDIP-24 |
| 文件页数： | 2/9页 |
| 文件大小： | 72K |
| 代理商： | WS57C45-45TMB |
DC READ CHARACTERISTICS Over Operating Range. (See Above)
SYMBOL
PARAMETER
TEST CONDITIONS
MIN
MAX
UNITS
VOL
Output Low Voltage
IOL = 16 mA
0.4
V
VOH
Output High Voltage
IOH = –4 mA
2.4
V
VCC = 5.5 V, f = 0 MHz (Note 1),
Comm'l
20
mA
ICC1
VCC Active Current
Output Not Loaded
Industrial
30
mA
(CMOS)
Add 2 mA/MHz for AC Operation
Military
30
mA
VCC = 5.5 V, f = 0 MHz (Note 1),
Comm'l
25
mA
ICC2
VCC Active Current
Output Not Loaded
Industrial
35
mA
(TTL)
Add 2 mA/MHz for AC Operation
Military
35
mA
ILI
Input Leakage Current
VIN = 5.5V or Gnd
–10
10
A
ILO
Output Leakage Current
VOUT = 5.5 V or Gnd
–10
10
A
SYMBOL
PARAMETER
CONDITIONS
MAX
UNITS
CIN
Input Capacitance
TA = 25°C, f = 1 MHz, VCC = 5.0 V
5
pF
COUT
Output Capacitance
8
pF
AC READ CHARACTERISTICS Over Operating Range. (See Above)
PARAMETER
SYMBOL
WS57C45-25
WS57C45-35
WS57C45-45
UNITS
MIN
MAX
MIN
MAX
MIN
MAX
Address Setup to Clock High
tSA
25
35
45
ns
Address Hold From Clock High
tHA
0
ns
Clock High to Valid Output
tCO
12
15
25
ns
Clock Pulse Width
tPWC
15
20
ns
OES Setup to Clock High
tSOE
S
12
15
ns
OES Hold From Clock High
tHOE
S
5
ns
Delay From INIT to Valid Output
tDI
20
35
ns
INIT Recovery to Clock High
tRI
15
20
ns
INIT Pulse Width
tPWI
15
20
25
ns
Active Output From Clock High
tLZC
15
20
30
ns
Inactive Output From Clock High
tHZC
15
20
30
ns
Active Output From OE Low
tLZOE
15
20
30
ns
Inactive Output From OE High
tHZOE
15
20
30
ns
OPERATING RANGE
RANGE
TEMPERATURE
VCC
Commercial
0°C to +70°C
+5V ± 10%
Industrial
–40°C to +85°C
+5V ± 10%
Military
–55°C to +125°C
+5V ± 10%
WS57C45
2-22
ABSOLUTE MAXIMUM RATINGS*
Storage Temperature............................–65° to + 150°C
Voltage on any Pin with
Respect to Ground ................................–0.6V to +7V
VPP with Respect to Ground...................–0.6V to + 14V
ESD Protection ..................................................
>2000V
NOTES:
1. CMOS inputs: GND ± 0.3V or VCC ± 0.3V.
3. This parameter is only sampled and is not 100% tested.
2. TTL inputs: VIL ≤ 0.8V, VIH ≥ 2.0V.
*NOTICE:
Stresses above those listed under "Absolute Maximum
Ratings" may cause permanent damage to the device.
This is a stress rating only and functional operation of
the device at these or any other conditions above
those indicated in the operational sections of this
specification is not implied. Exposure to absolute
maximum rating conditions for extended periods of
time may affect device reliability.
CAPACITANCE(4)
相关PDF资料 |
PDF描述 |
|---|---|
| WS57C49B-45FMB | 8K X 8 UVPROM, 45 ns, CDFP24 |
| WS57C49B-55TMB | 8K X 8 UVPROM, 55 ns, CDIP24 |
| WS57C49B-70T | 8K X 8 UVPROM, 70 ns, CDIP24 |
| WS57C49B-70D | 8K X 8 UVPROM, 70 ns, CDIP24 |
| WS57C49C-55J | 8K X 8 OTPROM, 55 ns, PQCC28 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| WS57C49B-35J | 制造商:WSI 功能描述: |
| WS57C49B-35T | 制造商:WSI 功能描述: |
| WS57C49B-45D | 制造商:WSI 功能描述:EPROM, 8K x 8, 24 Pin, Ceramic, DIP |
| WS57C49B-70D | 制造商:WSI 功能描述: |
| WS57C49C | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:HIGH SPEED 8K x 8 CMOS PROM/RPROM |
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