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参数资料
| 型号： | WSF128K32-22H2M |
| 厂商： | WHITE ELECTRONIC DESIGNS CORP |
| 元件分类： | 存储器 |
| 英文描述： | SPECIALTY MEMORY CIRCUIT, CPGA66 |
| 封装： | CERAMIC, HIP-66 |
| 文件页数： | 5/12页 |
| 文件大小： | 505K |
| 代理商： | WSF128K32-22H2M |
2
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
White Electronic Designs
WSF128K32-XH2X
October 2004
Rev. 4
White Electronic Designs Corp. reserves the right to change products or specications without notice.
PRELIMINARY
DC CHARACTERISTICS
VCC = 5.0V, VSS = 0V, -55°C ≤ TA ≤ +125°C
Parameter
Symbol
Conditions
Min
Max
Unit
Input Leakage Current
ILI
VCC = 5.5, VIN = GND to VCC
10
μA
Output Leakage Current
ILO
SCS# = VIH, OE# = VIH, VOUT = GND to VCC
10
μA
SRAM Operating Supply Current x 32 Mode
ICCx32
SCS# = VIL, OE# = FCS# = VIH, f = 5MHz, VCC = 5.5
670
mA
Standby Current
ISB
FCS# = SCS# = VIH, OE# = VIH, f = 5MHz, VCC = 5.5
80
mA
SRAM Output Low Voltage
VOL
IOL = 8mA, VCC = 4.5
0.4
V
SRAM Output High Voltage
VOH
IOH = -4.0mA, VCC = 4.5
2.4
V
Flash VCC Active Current for Read (1)
ICC1
FCS# = VIL, OE# = SCS# = VIH
220
mA
Flash VCC Active Current for Program or
Erase (2)
ICC2
FCS# = VIL, OE# = SCS# = VIH
280
mA
Flash Output Low Voltage
VOL
IOL = 8.0mA, VCC = 4.5
0.45
V
Flash Output High Voltage
VOH1
IOH = -2.5 mA, VCC = 4.5
0.85 x VCC
V
Flash Output High Voltage
VOH2
IOH = -100 μA, VCC = 4.5
VCC -0.4
V
Flash Low VCC Lock Out Voltage
VLKO
3.2
V
NOTES:
1. The ICC current listed includes both the DC operating current and the frequency dependent component (@ 5 MHz).
The frequency component typically is less than 2 mA/MHz, with OE# at VIH.
2. ICC active while Embedded Algorithm (program or erase) is in progress.
3. DC test conditions: VIL = 0.3V, VIH = VCC - 0.3V
SRAM TRUTH TABLE
SCS#
OE#
SWE#
Mode
Data I/O
Power
H
X
Standby
High Z
Standby
L
H
Read
Data Out
Active
L
H
Read
High Z
Active
L
X
L
Write
Data In
Active
NOTE:
1. FCS# must remain high when SCS# is low.
CAPACITANCE
Ta = +25°C
Parameter
Symbol
Conditions
Max Unit
OE# capacitance
COE
VIN = 0 V, f = 1.0 MHz
80
pF
F/S WE1-4# capacitance
CWE
VIN = 0 V, f = 1.0 MHz
30
pF
F/S CS# capacitance
CCS
VIN = 0 V, f = 1.0 MHz
50
pF
D0-31 capacitance
CI/O
VIN = 0 V, f = 1.0 MHz
30
pF
A0-16 capacitance
CAD
VIN = 0 V, f = 1.0 MHz
80
pF
This parameter is guaranteed by design but not tested.
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Min
Max
Unit
Operating Temperature
TA
-55
+125
°C
Storage Temperature
TSTG
-65
+150
°C
Signal Voltage Relative to GND
VG
-0.5
7.0
V
Junction Temperature
TJ
150
°C
Supply Voltage
VCC
-0.5
7.0
V
Parameter
Flash Data Retention
10 years
Flash Endurance (write/erase cycles)
10,000
NOTE:
1. Stresses above the absolute maximum rating may cause permanent damage to the
device. Extended operation at the maximum levels may degrade performance and
affect reliability.
RECOMMENDED OPERATING CONDITIONS
Parameter
Symbol
Min
Max
Unit
Supply Voltage
VCC
4.5
5.5
V
Input High Voltage
VIH
2.2
VCC + 0.3
V
Input Low Voltage
VIL
-0.5
+0.8
V
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相关代理商/技术参数 |
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|---|---|
| WSF128K32-22H2MA | 制造商:未知厂家 制造商全称:未知厂家 功能描述:128K x 32 SRAM/FLASH MODULE |
| WSF128K32-27H2C | 制造商:未知厂家 制造商全称:未知厂家 功能描述:128K x 32 SRAM/FLASH MODULE |
| WSF128K32-27H2CA | 制造商:WEDC 制造商全称:White Electronic Designs Corporation 功能描述:128KX32 SRAM/FLASH MODULE |
| WSF128K32-27H2I | 制造商:未知厂家 制造商全称:未知厂家 功能描述:128K x 32 SRAM/FLASH MODULE |
| WSF128K32-27H2IA | 制造商:未知厂家 制造商全称:未知厂家 功能描述:128K x 32 SRAM/FLASH MODULE |
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