- 您现在的位置：买卖IC网 > PDF目录225548 > WV3EG64M72ETSU335D3M (WHITE ELECTRONIC DESIGNS CORP) 64M X 72 DDR DRAM MODULE, DMA184 PDF资料下载
参数资料
| 型号： | WV3EG64M72ETSU335D3M |
| 厂商： | WHITE ELECTRONIC DESIGNS CORP |
| 元件分类： | DRAM |
| 英文描述： | 64M X 72 DDR DRAM MODULE, DMA184 |
| 封装： | DIMM-184 |
| 文件页数： | 8/10页 |
| 文件大小： | 230K |
| 代理商： | WV3EG64M72ETSU335D3M |
White Electronic Designs
7
White Electronic Designs Corporation (602) 437-1520 www.wedc.com
October 2005
Rev. 0
PRELIMINARY
WV3EG64M72ETSU-D3
DDR SDRAM COMPONENT ELECTRICAL CHARACTERISTICS AND
RECOMMENDED AC OPERATING CONDITIONS (continued)
Parameter
Symbol
335
Unit
Min
Max
Mode register set cycle time
tMRD
12
ns
DQ & DM setup time to DQS
tDS
0.45
ns
DQ & DM hold time to DQS
tDH
0.45
ns
Control & Address input pulse width
tIPW
2.2
ns
DQ & DM input pulse width
tDIPW
1.75
ns
Exit self refresh to non-Read command
tXSNR
75
ns
Exit self refresh to read command
tXSRD
200
tCK
Refresh interval time
tREFI
7.8
us
Output DQS valid window
tQH
tHP-tQHS
—ns
Clock half period
tHP
tCLmin or tCHmin
—ns
Data hold skew factor
tQHS
0.55
ns
DQS write postamble time
tWPST
0.4
0.6
ns
Active to Read with Auto precharge command
tRAP
18
Autoprecharge write recovery + Precharge time
tRAL
(tWR/tCK) +
(tRP/tCK)
tCK
Note: These specications apply to modules built with Samsung components only.
AC OPERATING TEST CONDITIONS
VCC = 2.5V, VCCQ = 2.5V, 0°C
≤ TA ≤ 70°C
Parameter/Condition
Symbol
Min
Max
Unit
Note
Input High (Logic 1) Voltage
VIH(AC)
VREF +0.31
V
1
Input Low (Logic 0) Voltage
VIL(AC)
VREF -0.31
V
1
Input Differential Voltage, CK and CK# inputs
VID(AC)
0.7
VCCQ+0.6
V
Input Crossing Point Voltage, CK and CK# inputs
VIX(AC)
0.5*VCCQ-0.2
0.5*VCCQ+0.2
V
NOTES:
1. VIH overshoot: VIH = VCCQ +1.5V for a pulse width < 3ns and the pulse can not be greater than 1/3 of the cycle rate.
VIL undershoot: VIL = -1.5V for a pulse width < 3ns and the pulse can not be greater than 1/3 of the cycle rate.
相关PDF资料 |
PDF描述 |
|---|---|
| WV3EG64M72ETSU335D3SG | 64M X 72 DDR DRAM MODULE, DMA184 |
| WV3HG128M72AER403D6MG | 128M X 72 DDR DRAM MODULE, 0.6 ns, DMA240 |
| WV3HG128M72AER534AD6MF | 128M X 72 DDR DRAM MODULE, 0.5 ns, DMA240 |
| WV3HG64M72AER403AD6SG | 64M X 72 DDR DRAM MODULE, 0.6 ns, DMA240 |
| WVL9EB681K | SHIELDED, VARIABLE INDUCTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| WV3EG64M72ETSU-D3 | 制造商:WEDC 制造商全称:White Electronic Designs Corporation 功能描述:512MB - 64Mx72 DDR SDRAM UNBUFFERED |
| WV3EG72M64ETSU335D3MG | 制造商:WEDC 制造商全称:White Electronic Designs Corporation 功能描述:512MB - 64Mx72 DDR SDRAM UNBUFFERED |
| WV3EG72M64ETSU335D3SG | 制造商:WEDC 制造商全称:White Electronic Designs Corporation 功能描述:512MB - 64Mx72 DDR SDRAM UNBUFFERED |
| WV3H2256M72AER403D6IMG | 制造商:WEDC 制造商全称:White Electronic Designs Corporation 功能描述:4GB - 2x256Mx72 DDR2 SDRAM RDIMM, w/PLL |
| WV3H2256M72AER403D6ISG | 制造商:WEDC 制造商全称:White Electronic Designs Corporation 功能描述:4GB - 2x256Mx72 DDR2 SDRAM RDIMM, w/PLL |
发布紧急采购，3分钟左右您将得到回复。