参数资料
| 型号： | X1227S8IZ-4.5A |
| 厂商： | Intersil |
| 文件页数： | 6/28页 |
| 文件大小： | 0K |
| 描述： | IC RTC/CAL/CPU SUP EE 8-SOIC |
| 标准包装： | 100 |
| 类型： | 时钟/日历 |
| 特点： | 警报器，闰年，监控器，监视计时器 |
| 时间格式： | HH:MM:SS（12/24 小时） |
| 数据格式： | YY-MM-DD-dd |
| 接口： | I²C，2 线串口 |
| 电源电压： | 4.5 V ~ 5.5 V |
| 电压 - 电源，电池： | 1.8 V ~ 5.5 V |
| 工作温度： | -40°C ~ 85°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOIC |
| 包装： | 管件 |
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14
FN8099.2
May 8, 2006
Analog Trimming Register (ATR) (Non-volatile)
Six analog trimming Bits from ATR5 to ATR0 are pro-
vided to adjust the on-chip loading capacitance range.
The on-chip load capacitance ranges from 3.25pF to
18.75pF. Each bit has a different weight for capacitance
adjustment. Using a Citizen CFS-206 crystal with differ-
ent ATR bit combinations provides an estimated ppm
range from +116ppm to -37ppm to the nominal fre-
quency compensation. The combination of digital and
analog trimming can give up to +146ppm adjustment.
The on-chip capacitance can be calculated as follows:
CATR = [(ATR value, decimal) x 0.25pF] + 11.0pF
Note that the ATR values are in two’s complement,
with ATR(000000) = 11.0pF, so the entire range runs
from 3.25pF to 18.75pF in 0.25pF steps.
The values calculated above are typical, and total load
capacitance seen by the crystal will include approxi-
mately 2pF of package and board capacitance in addi-
tion to the ATR value.
See Application section and Intersil’s Application Note
AN154 for more information.
WRITING TO THE CLOCK/CONTROL REGISTERS
Changing any of the nonvolatile bits of the clock/con-
trol register requires the following steps:
– Write a 02h to the Status Register to set the Write
Enable Latch (WEL). This is a volatile operation,
so there is no delay after the write. (Operation
preceeded by a start and ended with a stop).
– Write a 06h to the Status Register to set both the
Register Write Enable Latch (RWEL) and the WEL
bit. This is also a volatile cycle. The zeros in the data
byte are required. (Operation preceeded by a start
and ended with a stop).
– Write one to 8 bytes to the Clock/Control Registers
with the desired clock, alarm, or control data. This
sequence starts with a start bit, requires a slave byte
of “11011110” and an address within the CCR and is
terminated by a stop bit. A write to the CCR changes
EEPROM values so these initiate a nonvolatile write
cycle and will take up to 10ms to complete. Writes to
undefined areas have no effect. The RWEL bit is
reset by the completion of a nonvolatile write cycle,
so the sequence must be repeated to again initiate
another change to the CCR contents. If the
sequence is not completed for any reason (by send-
ing an incorrect number of bits or sending a start
instead of a stop, for example) the RWEL bit is not
reset and the device remains in an active mode.
– Writing all zeros to the status register resets both the
WEL and RWEL bits.
– A read operation occurring between any of the
previous operations will not interrupt the register
write operation.
X1227
相关PDF资料 |
PDF描述 |
|---|---|
| X1227S8IZ-2.7AT1 | IC RTC/CAL/CPU SUP EE 8-SOIC |
| MCP4252T-103E/UN | IC RHEOSTAT 10K 2CH 10-MSOP |
| MCP4252T-104E/MF | IC RHEOSTAT 100K 2CH 10-DFN |
| X1227S8IZ-2.7A | IC RTC/CAL/CPU SUP EE 8-SOIC |
| MCP4252T-104E/UN | IC RHEOSTAT 100K 2CH 10-MSOP |
相关代理商/技术参数 |
参数描述 |
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| X1227S8T1 | 功能描述:IC RTC/CAL/CPU SUP EE 8-SOIC RoHS:否 类别:集成电路 (IC) >> 时钟/计时 - 实时时钟 系列:- 产品培训模块:Obsolescence Mitigation Program 标准包装:1 系列:- 类型:时钟/日历 特点:警报器，闰年，SRAM 存储容量:- 时间格式:HH:MM:SS（12/24 小时） 数据格式:YY-MM-DD-dd 接口:SPI 电源电压:2 V ~ 5.5 V 电压 - 电源，电池:- 工作温度:-40°C ~ 85°C 安装类型:表面贴装 封装/外壳:8-WDFN 裸露焊盘 供应商设备封装:8-TDFN EP 包装:管件 |
| X1227S8Z | 功能描述:IC RTC/CAL/CPU SUP EE 8-SOIC RoHS:是 类别:集成电路 (IC) >> 时钟/计时 - 实时时钟 系列:- 产品培训模块:Obsolescence Mitigation Program 标准包装:1 系列:- 类型:时钟/日历 特点:警报器，闰年，SRAM 存储容量:- 时间格式:HH:MM:SS（12/24 小时） 数据格式:YY-MM-DD-dd 接口:SPI 电源电压:2 V ~ 5.5 V 电压 - 电源，电池:- 工作温度:-40°C ~ 85°C 安装类型:表面贴装 封装/外壳:8-WDFN 裸露焊盘 供应商设备封装:8-TDFN EP 包装:管件 |
| X1227S8Z-2.7 | 功能描述:IC RTC/CAL/CPU SUP EE 8-SOIC RoHS:是 类别:集成电路 (IC) >> 时钟/计时 - 实时时钟 系列:- 产品培训模块:Obsolescence Mitigation Program 标准包装:1 系列:- 类型:时钟/日历 特点:警报器，闰年，SRAM 存储容量:- 时间格式:HH:MM:SS（12/24 小时） 数据格式:YY-MM-DD-dd 接口:SPI 电源电压:2 V ~ 5.5 V 电压 - 电源，电池:- 工作温度:-40°C ~ 85°C 安装类型:表面贴装 封装/外壳:8-WDFN 裸露焊盘 供应商设备封装:8-TDFN EP 包装:管件 |
| X1227S8Z-2.7A | 功能描述:IC RTC/CAL/CPU SUP EE 8-SOIC RoHS:是 类别:集成电路 (IC) >> 时钟/计时 - 实时时钟 系列:- 产品培训模块:Obsolescence Mitigation Program 标准包装:1 系列:- 类型:时钟/日历 特点:警报器，闰年，SRAM 存储容量:- 时间格式:HH:MM:SS（12/24 小时） 数据格式:YY-MM-DD-dd 接口:SPI 电源电压:2 V ~ 5.5 V 电压 - 电源，电池:- 工作温度:-40°C ~ 85°C 安装类型:表面贴装 封装/外壳:8-WDFN 裸露焊盘 供应商设备封装:8-TDFN EP 包装:管件 |
| X1227S8Z-4.5A | 功能描述:IC RTC/CAL/CPU SUP EE 8-SOIC RoHS:是 类别:集成电路 (IC) >> 时钟/计时 - 实时时钟 系列:- 产品培训模块:Obsolescence Mitigation Program 标准包装:1 系列:- 类型:时钟/日历 特点:警报器，闰年，SRAM 存储容量:- 时间格式:HH:MM:SS（12/24 小时） 数据格式:YY-MM-DD-dd 接口:SPI 电源电压:2 V ~ 5.5 V 电压 - 电源，电池:- 工作温度:-40°C ~ 85°C 安装类型:表面贴装 封装/外壳:8-WDFN 裸露焊盘 供应商设备封装:8-TDFN EP 包装:管件 |
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