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参数资料
| 型号： | X3100V28Z |
| 厂商： | INTERSIL CORP |
| 元件分类： | 电源管理 |
| 英文描述： | 4-CHANNEL POWER SUPPLY SUPPORT CKT, PDSO28 |
| 封装： | ROHS COMPLIANT, PLASTIC, MO-153AE, TSSOP-28 |
| 文件页数： | 2/41页 |
| 文件大小： | 561K |
| 代理商： | X3100V28Z |
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10
FN8110.1
January 3, 2008
Cell Number Selection
The X3100 is designed to operate with four (4) Li-Ion battery
cells. The X3101 is designed to operate with three (3) Li-ion
battery cells. The CELLN bit of the configuration register
(Table 9) sets the number of cells recognized. For the
X3101, the value for CELLN should always be zero.
Table 9. Selection of Number of Battery Cells1
The configuration register consists of 16 bits of
NOVRAM memory (Table 2, Table 3). This memory
features a high-speed static RAM (SRAM) overlaid bit-
for-bit with non-volatile “Shadow” EEPROM. An auto-
matic array recall operation reloads the contents of the
shadow EEPROM into the SRAM configuration regis-
ter upon power-up (Figure 1).
Figure 1. Power-up of Configuration Register
The configuration register is designed for unlimited
write operations to SRAM, and a minimum of
1,000,000 store operations to the EEPROM. Data
retention is specified to be greater than 100 years.
It should be noted that the bits of the shadow
EEPROM are for the dedicated use of the configura-
tion register, and are NOT part of the general purpose
4kbit EEPROM array.
T
he WCFIG command writes to the configuration reg-
ister, see Table 30 and section “X3100/X3101 SPI Serial
After writing to this register using a WCFIG instruction,
data will be stored only in the SRAM of the configura-
tion register. In order to store data in shadow
EEPROM, a WREN instruction, followed by a
EEWRITE to any address of the 4kbit EEPROM mem-
ory array must occur, see Figure 2. This sequence ini-
tiates an internal nonvolatile write cycle which permits
data to be stored in the shadow EEPROM cells. It
must be noted that even though a EEWRITE is made
to the general purpose 4kbit EEPROM array, the value
and address to which it is written, is unimportant. If this
procedure is not followed, the configuration register
will power-up to the last previously stored values fol-
lowing a power-down sequence.
Configuration
Register Bit
Operation
CELLN
1
4 Li-Ion battery cells (X3100 default)
0
3 Li-Ion battery cells (X3100 or X3101)
1. In the case that the X3100 or X3101 is configured for use with
only three Li-Ion battery cells (i.e. CELLN = 0), then VCELL4
(pin 7) MUST be tied to Vss (pin 9) to ensure correct operation.
Configuration Register (SRAM)
Shadow EEPROM
Recall
Upper Byte
Lower Byte
X3100, X3101
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相关代理商/技术参数 |
参数描述 |
|---|---|
| X3101 | 制造商:XICOR 制造商全称:Xicor Inc. 功能描述:3 or 4 Cell Li-Ion Battery Protection and Monitor IC |
| X3101PT-V | 制造商:XICOR 制造商全称:Xicor Inc. 功能描述:3 or 4 Cell Li-Ion Battery Protection and Monitor IC |
| X3101V28 | 功能描述:IC PROTECT/MONITOR 3CELL 28TSSOP RoHS:否 类别:集成电路 (IC) >> PMIC - 电池管理 系列:- 标准包装:1 系列:- 功能:充电管理 电池化学:锂离子（Li-Ion）、锂聚合物（Li-Pol） 电源电压:3.75 V ~ 6 V 工作温度:-40°C ~ 85°C 安装类型:表面贴装 封装/外壳:SC-74A，SOT-753 供应商设备封装:SOT-23-5 包装:剪切带 (CT) 产品目录页面:669 (CN2011-ZH PDF) 其它名称:MCP73831T-2ACI/OTCT |
| X3101V28C7988 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| X3101V28T1 | 功能描述:IC PROTECT/MONITOR 3CELL 28TSSOP RoHS:否 类别:集成电路 (IC) >> PMIC - 电池管理 系列:- 标准包装:1 系列:- 功能:充电管理 电池化学:锂离子（Li-Ion）、锂聚合物（Li-Pol） 电源电压:3.75 V ~ 6 V 工作温度:-40°C ~ 85°C 安装类型:表面贴装 封装/外壳:SC-74A，SOT-753 供应商设备封装:SOT-23-5 包装:剪切带 (CT) 产品目录页面:669 (CN2011-ZH PDF) 其它名称:MCP73831T-2ACI/OTCT |
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