- 您现在的位置：买卖IC网 > PDF目录19900 > XC18V512VQ44C (Xilinx Inc)IC PROM SRL CONFIG 512K 44-VQFP PDF资料下载
参数资料
| 型号： | XC18V512VQ44C |
| 厂商： | Xilinx Inc |
| 文件页数： | 8/24页 |
| 文件大小： | 0K |
| 描述： | IC PROM SRL CONFIG 512K 44-VQFP |
| 标准包装： | 160 |
| 可编程类型： | 系统内可编程 |
| 存储容量： | 512kb |
| 电源电压： | 3 V ~ 3.6 V |
| 工作温度： | 0°C ~ 70°C |
| 封装/外壳： | 44-TQFP |
| 供应商设备封装： | 44-VQFP（10x10） |
| 包装： | 托盘 |
| 其它名称： | 122-1241 XC18V512VQ44C-ND |
XC18V00 Series In-System-Programmable Configuration PROMs
DS026 (v5.2) January 11, 2008
Product Specification
16
R
Recommended Operating Conditions
Quality and Reliability Characteristics
DC Characteristics Over Operating Conditions
Symbol
Parameter
Min
Max
Units
VCCINT
Internal voltage supply
3.0
3.6
V
VCCO
Supply voltage for output drivers for 3.3V operation
3.0
3.6
V
Supply voltage for output drivers for 2.5V operation
2.3
2.7
V
VIL
Low-level input voltage
0
0.8
V
VIH
High-level input voltage
2.0
5.5
V
VO
Output voltage
0
VCCO
V
TVCC
VCCINT rise time from 0V to nominal voltage(1)
150
ms
TA
Operating ambient temperature(2)
–40
85
° C
Notes:
1.
At power up, the device requires the VCCINT power supply to rise monotonically from 0V to nominal voltage within the specified VCCINT rise
time. If the power supply cannot meet this requirement, then the device might not perform power-on-reset properly. See Figure 9, page 14.
2.
Covers the industrial temperature range.
Symbol
Description
Min
Max
Units
TDR
Data retention
20
–
Years
NPE
Program/erase cycles (Endurance)
20,000
–
Cycles
VESD
Electrostatic discharge (ESD)
2,000
–
Volts
Symbol
Parameter
Test Conditions
Min
Max
Units
VOH
High-level output voltage for 3.3V outputs
IOH = –4 mA
2.4
–
V
High-level output voltage for 2.5V outputs
IOH = –500 μA90% VCCO
–V
VOL
Low-level output voltage for 3.3V outputs
IOL = 8 mA
–
0.4
V
Low-level output voltage for 2.5V outputs
IOL = 500 μA–
0.4
V
ICC
Supply current, active mode
25 MHz
–
25
mA
ICCS
Supply current, standby mode
–
10
mA
IILJ
JTAG pins TMS, TDI, and TDO pull-up current (1)
VCCINT = MAX
VIN = GND
–100
μA
IIL
Input leakage current
VCCINT = Max
VIN = GND or VCCINT
–10
10
μA
IIH
Input and output high-Z leakage current
VCCINT = Max
VIN = GND or VCCINT
–10
10
μA
CIN
Input capacitance
VIN = GND
f = 1.0 MHz
–8
pF
COUT
Output capacitance
VOUT = GND
f = 1.0 MHz
–
14
pF
Notes:
1.
Internal pull-up resistors guarantee valid logic levels at unconnected input pins. These pull-up resistors do not guarantee valid logic levels
when input pins are connected to other circuits.
相关PDF资料 |
PDF描述 |
|---|---|
| 1235L3X2 | BATTERY PK S-HD 9.0V C SIZE ZINC |
| R-78AA5.0-1.0SMD-R | CONV DC/DC 1A 5V OUT SMD |
| GBM25DSXH | CONN EDGECARD 50POS DIP .156 SLD |
| AT17LV512-10JC | IC SER CFG PROM 512K 3.3V 20PLCC |
| NCV8506D2T33G | IC REG LDO 3.3V .4A D2PAK-7 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| XC18V512VQ44C0936 | 制造商:Xilinx 功能描述:XLXXC18V512VQ44C0936 IC SYSTEM GATE |
| XC18V512VQ44I | 功能描述:IC PROM SER I-TEMP 3.3V 44-VQFP RoHS:否 类别:集成电路 (IC) >> 存储器 - 用于 FPGA 的配置 Proms 系列:- 产品变化通告:Product Discontinuation 28/Jul/2010 标准包装:98 系列:- 可编程类型:OTP 存储容量:300kb 电源电压:3 V ~ 3.6 V 工作温度:-40°C ~ 85°C 封装/外壳:8-SOIC（0.154"，3.90mm 宽） 供应商设备封装:8-TSOP 包装:管件 |
| XC18V512VQG44C | 功能描述:IC PROM REPROGR 512KB 44-VQFP RoHS:是 类别:集成电路 (IC) >> 存储器 - 用于 FPGA 的配置 Proms 系列:- 产品变化通告:Product Discontinuation 28/Jul/2010 标准包装:98 系列:- 可编程类型:OTP 存储容量:300kb 电源电压:3 V ~ 3.6 V 工作温度:-40°C ~ 85°C 封装/外壳:8-SOIC（0.154"，3.90mm 宽） 供应商设备封装:8-TSOP 包装:管件 |
| XC1900A-03 | 制造商:ANAREN 制造商全称:Anaren Microwave 功能描述:Hybrid Coupler 3 dB, 90∑ |
| XC1900A-03 SR | 制造商:Anaren Inc 功能描述:RF HYBRID COUPLER |
发布紧急采购，3分钟左右您将得到回复。