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| 型号： | XN0111F(XN111F) |
| 英文描述： | Composite Device - Composite Transistors |
| 中文描述： | 复合设备-复合晶体管 |
| 文件页数： | 1/3页 |
| 文件大小： | 46K |
| 代理商： | XN0111F(XN111F) |
1
Composite Transistors
XN01111 (XN1111)
Silicon PNP epitaxial planer transistor
For switching/digital circuits
s Features
q
Two elements incorporated into one package.
(Emitter-coupled transistors with built-in resistor)
q
Reduction of the mounting area and assembly cost by one half.
s Basic Part Number of Element
q
UNR1111(UN1111)
× 2 elements
s Absolute Maximum Ratings (Ta=25C)
1 : Collector (Tr1)
4 : Emitter
2 : Collector (Tr2)
5 : Base (Tr1)
3 : Base (Tr2)
EIAJ : SC–74A
Mini5-G1 Pakage
Unit: mm
Marking Symbol:
9S
Internal Connection
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
–50
V
Collector to emitter voltage
VCEO
–50
V
Collector current
IC
–100
mA
Total power dissipation
PT
300
mW
Junction temperature
Tj
150
C
Storage temperature
Tstg
–55 to +150
C
Rating
of
element
Overall
2.90
1.9±0.1
0.16
+0.10
–0.06
2.8
+0.2 –0.3
1.1
+0.3 –0.1
1.1
0
to
0.1
+0.2 –0.1
1.50
(0.65)
0.4
±0.2
+0.25 –0.05
(0.95) (0.95)
0.30
+0.10
–0.05
5
4
3
1
2
+0.20
–0.05
5
10
s Electrical Characteristics (Ta=25C)
Parameter
Symbol
Conditions
min
typ
max
Unit
Collector to base voltage
VCBO
IC = –10A, IE = 0
–50
V
Collector to emitter voltage
VCEO
IC = –2mA, IB = 0
–50
V
Collector cutoff current
ICBO
VCB = –50V, IE = 0
– 0.1
A
ICEO
VCE = –50V, IB = 0
– 0.5
A
Emitter cutoff current
IEBO
VEB = –6V, IC = 0
– 0.5
mA
Forward current transfer ratio
hFE
VCE = –10V, IC = –5mA
35
Forward current transfer hFE ratio
hFE (small/large)
*1
VCE = –10V, IC = –5mA
0.5
0.99
Collector to emitter saturation voltage
VCE(sat)
IC = –10mA, IB = – 0.3mA
– 0.25
V
Output voltage high level
VOH
VCC = –5V, VB = – 0.5V, RL = 1k
–4.9
V
Output voltage low level
VOL
VCC = –5V, VB = –2.5V, RL = 1k
– 0.2
V
Transition frequency
fT
VCB = –10V, IE = 1mA, f = 200MHz
80
MHz
Input resistance
R1
–30%
10
+30%
k
Resistance ratio
R1/R2
0.8
1.0
1.2
*1 Ratio between 2 elements
5
1
Tr2
Tr1
4
32
Note) The Part number in the Parenthesis shows conventional part number.
相关PDF资料 |
PDF描述 |
|---|---|
| XN0111H(XN111H) | Composite Device - Composite Transistors |
| XN0111M(XN111M) | 複合デバイス － 複合トランジスタ |
| XN01212(XN1212) | 複合デバイス － 複合トランジスタ |
| XN01213(XN1213) | Composite Device - Composite Transistors |
| XN01216(XN1216) | Composite Device - Composite Transistors |
相关代理商/技术参数 |
参数描述 |
|---|---|
| XN0111H | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SOT-25 |
| XN0111H(XN111H) | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Composite Device - Composite Transistors |
| XN0111H00L | 功能描述:TRANS ARRAY PNP/PNP W/RES MINI5P RoHS:是 类别:分离式半导体产品 >> 晶体管(BJT) - 阵列﹐预偏压式 系列:- 标准包装:3,000 系列:- 晶体管类型:1 个 NPN，1 个 PNP - 预偏压式（双） 电流 - 集电极 (Ic)（最大）:70mA，100mA 电压 - 集电极发射极击穿（最大）:50V 电阻器 - 基极 (R1)（欧）:47k，2.2k 电阻器 - 发射极 (R2)（欧）:47k 在某 Ic、Vce 时的最小直流电流增益 (hFE):70 @ 5mA，5V Ib、Ic条件下的Vce饱和度（最大）:300mV @ 500µA，10mA 电流 - 集电极截止（最大）:- 频率 - 转换:100MHz，200MHz 功率 - 最大:250mW 安装类型:表面贴装 封装/外壳:6-TSSOP，SC-88，SOT-363 供应商设备封装:PG-SOT363-6 包装:带卷 (TR) 其它名称:SP000784046 |
| XN0111M(XN111M) | 制造商:未知厂家 制造商全称:未知厂家 功能描述:複合デバイス － 複合トランジスタ |
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