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参数资料
| 型号： | YA855C12R |
| 厂商： | FUJI ELECTRIC CO LTD |
| 元件分类： | 整流器 |
| 英文描述： | 120 V, SILICON, RECTIFIER DIODE |
| 文件页数： | 1/6页 |
| 文件大小： | 645K |
| 代理商： | YA855C12R |
1
YA855C12R
Maximum Rating and Characteristics
Maximum ratings (at Ta=25C unless otherwise specified.)
Item
Symbols
Conditions
Ratings
Units
Repetitive peak reverse voltage
VRRM
-
120
V
Average output current
Io
50Hz Square wave duty =1/2
Tc = 111C
20*
A
Non-repetitive forward surge current**
IFSM
Sine wave, 10ms 1shot
95
A
Operating junction temperature
Tj
-
150
C
Storage temperature
Tstg
-
-40 to +150
C
Note* Out put current of center tap full wave connection.
Note** Rating per element
Electrical characteristics (at Ta=25C unless otherwise specified.)
Item
Symbols
Conditions
Maximum
Units
Forward voltage***
VF
IF =10 A
0.98
V
Reverse current***
IR
VR =VRRM
175
A
Thermal resistance
Rth(j-c)
Junction to case
1.75
C/W
Note*** Rating per element
http://www.fujisemi.com
FUJI Diode
Mechanical characteristics
Item
Conditions
Maximum
Units
Mounting torque
Recommended torque
0.3 to 0.5
Nm
Approximate mass
-
2.0
g
Schottky Barrier Diode
相关PDF资料 |
PDF描述 |
|---|---|
| YA858C12R | 120 V, SILICON, RECTIFIER DIODE |
| YA858C15R | 150 V, SILICON, RECTIFIER DIODE |
| YA862C10R | 10 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AB |
| YA862C12R | 10 A, 120 V, SILICON, RECTIFIER DIODE, TO-220AB |
| YA862C15R | 10 A, 150 V, SILICON, RECTIFIER DIODE, TO-220AB |
相关代理商/技术参数 |
参数描述 |
|---|---|
| YA855C15R | 制造商:FUJI 制造商全称:Fuji Electric 功能描述:Schottky Barrier Diode |
| YA858C12R | 制造商:FUJI 制造商全称:Fuji Electric 功能描述:Schottky Barrier Diode |
| YA858C15R | 制造商:FUJI 制造商全称:Fuji Electric 功能描述:Schottky Barrier Diode |
| YA862C04R | 制造商:FUJI 制造商全称:Fuji Electric 功能描述:Low IR Schottky barrier diode |
| YA862C06R | 制造商:FUJI 制造商全称:Fuji Electric 功能描述:Low IR Schottky barrier diode |
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