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参数资料
| 型号： | YA869C15R |
| 厂商： | FUJI ELECTRIC CO LTD |
| 元件分类： | 整流器 |
| 英文描述： | 150 V, SILICON, RECTIFIER DIODE |
| 文件页数： | 4/6页 |
| 文件大小： | 641K |
| 代理商： | YA869C15R |
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YA869C15R
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http://www.fujisemi.com
FUJI Diode
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5
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65
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80
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100
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120
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Square wave λ=60°
Square wave λ=120°
Square wave λ=180°
Sine wave λ=180°
Tc
C
as
e
Te
m
pe
ra
tu
re
(°
C
)
Io Average Output Current (A)
λ
:Conduction angle of forward current for each rectifier element
Io:Output current of center-tap full wave connection
DC
Current Derating (Io-Tc) (max.)
λ
360°
I0
VR=75V
0
1
0
1
10
100
1000
Surge Capability (max.)
IF
SM
Pe
ak
H
al
f-
W
av
e
C
ur
re
nt
(A
)
Number of Cycles at 50Hz
0
1
0
1
0
1
10
100
1000
Junction Capacitance Characteristic (max.)
C
j
Ju
nc
tio
n
C
ap
ac
ita
nc
e
(p
F)
VR Reverse Voltage (V)
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PDF描述 |
|---|---|
| YA872C12R | 120 V, SILICON, RECTIFIER DIODE, TO-220AB |
| YA872C15R | 150 V, SILICON, RECTIFIER DIODE, TO-220AB |
| YA872C20R | 200 V, SILICON, RECTIFIER DIODE, TO-220AB |
| YA875C12R | 120 V, SILICON, RECTIFIER DIODE, TO-220AB |
| YA875C20R | 200 V, SILICON, RECTIFIER DIODE, TO-220AB |
相关代理商/技术参数 |
参数描述 |
|---|---|
| YA875C10R | 制造商:FUJI 制造商全称:Fuji Electric 功能描述:Ultra Low IR Schottky Barrier Diode |
| YA875C15R | 制造商:FUJI 制造商全称:Fuji Electric 功能描述:Ultra Low IR Schottky Barrier Diode |
| YA875C20R | 制造商:FUJI 制造商全称:Fuji Electric 功能描述:Ultra Low IR Schottky Barrier Diode |
| YA878C10R | 制造商:FUJI 制造商全称:Fuji Electric 功能描述:Ultra Low IR Schottky Barrier Diode |
| YA878C12R | 制造商:FUJI 制造商全称:Fuji Electric 功能描述:Ultra Low IR Schottky Barrier Diode |
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