参数资料
型号: YG225C8
元件分类: 整流器
英文描述: 10 A, 800 V, SILICON, RECTIFIER DIODE
封装: SC-67, FULL PACK-3
文件页数: 2/3页
文件大小: 56K
代理商: YG225C8
YG225C8,N8,D8 (10A)
(800V / 10A )
Characteristics
0.01
0.1
1
10
0.0
0.5
1.0
1.5
2.0
2.5
Tj=25°C
Tj=100°C
Tj=125°C
Tj=150°C
Forward Characteristic (typ.)
IF
Forward
Current
(A)
VF Forward Voltage (V)
0
100
200
300
400
500
600
700
800
900
1000
10
-2
10
-1
10
0
10
1
10
2
10
3
Tj=25°C
Tj=100°C
Tj=125°C
Reverse Characteristic (typ.)
Tj=150°C
IR
Reverse
Current
(uA)
VR
Reverse Voltage (V)
01
2
3
4
5
6
0
2
4
6
8
10
12
Square wave
λ=60°C
Square wave
λ=120°C
Sine wave
λ=180°C
Square wave
λ=180°C
Per 1element
DC
Forward Power Dissipation
WF
Forward
Power
Dissipation
(W)
IO
Average Forward Current
(A)
123456789012345678
360o
λλλλλ
Io
0
2468
10
50
60
70
80
90
100
110
120
130
140
150
λ
Square wave
λ=60°C
Square wave
λ=120°C
Sine wave
λ=180°C
Square wave
λ=180°C
:Conduction angle of forward current for each rectifier element
Io:Output current of center-tap full wave connection
DC
Current Derating (Io-Tc)
TC
Case
Temperature
(°C)
IO
Average Output Current
(A)
10
100
1000
1
10
100
Junction Capacitance Characteristic (typ.)
CJ
Junction
Capacitance
(pF)
VR
Reverse Voltage (V)
110
10
100
Surge Capability
IFSM
Peak
Half
-
Wave
Current
(A)
Number of Cycles at 50Hz
相关PDF资料
PDF描述
YG225N8 10 A, 800 V, SILICON, RECTIFIER DIODE
YG226S2 5 A, 200 V, SILICON, RECTIFIER DIODE
YG226S8 5 A, 800 V, SILICON, RECTIFIER DIODE
YG233N2 8 A, 200 V, SILICON, RECTIFIER DIODE
YG233C2 8 A, 200 V, SILICON, RECTIFIER DIODE
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