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参数资料
| 型号： | YG838C04R |
| 厂商： | FUJI ELECTRIC CO LTD |
| 元件分类： | 整流器 |
| 英文描述： | 30 A, 40 V, SILICON, RECTIFIER DIODE |
| 封装： | TO-220F, 3 PIN |
| 文件页数： | 2/3页 |
| 文件大小： | 65K |
| 代理商： | YG838C04R |
YG838C04R (30A)
(40V / 30A )
Characteristics
0.1
1
10
100
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
Tj=150°C
Tj=125°C
Tj=100°C
Tj=25°C
Forward Characteristic (typ.)
IF
Forward
Current
(A)
VF
Forward Voltage (V)
0
1020
304050
10
-2
10
-1
10
0
10
1
10
2
10
3
Reverse Characteristic (typ.)
Tj= 25°C
Tj=100°C
Tj=125°C
Tj=150°C
IR
Reverse
Current
(mA)
VR
Reverse Voltage (V)
0
2
4
6
8
10
12
14
16
0
2
4
6
8
10
12
14
16
18
20
22
Per 1element
DC
Square wave
λ=180°
Sine wave
λ=180°
Square wave
λ=120°
Square wave
λ=60°
Forward Power Dissipation
WF
Forward
Power
Dissipation
(W)
Io
Average Forward Current (A)
360°
Io
λ
-5
0
5
10
15
20
25
30
35
40
45
0
2
4
6
8
10
12
14
16
18
20
22
24
26
28
30
32
34
36
38
Reverse Power Dissipation
α=180°
DC
PR
Reverse
Power
Dissipation
(W)
VR
Reverse Voltage (V)
360°
VR
α
0
5
10
15
20
25
30
35
40
45
30
40
50
60
70
80
90
100
110
120
130
140
150
160
λ:Conduction angle of forward current for each rectifier element
Io:Output current of center-tap full wave connection
Square wave
λ=120°
Square wave
λ=60°
Square wave
λ=180°
Sine wave
λ=180°
DC
Current Derating (Io-Tc)
Tc
Case
Temperature
(°C)
Io
Average Output Current (A)
VR=30V
360°
λ
Io
1
10
100
10
100
1000
10000
Junction Capacitance Characteristic (typ.)
Cj
Junction
Capacitance
(pF)
VR
Reverse Voltage (V)
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相关代理商/技术参数 |
参数描述 |
|---|---|
| YG838C04RSC-P | 制造商:Fuji Electric 功能描述: |
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| YG852C15R | 制造商:FUJI 制造商全称:Fuji Electric 功能描述:Schottky Barrier Diode |
| YG852C15RSC-P | 制造商:Fuji Electric 功能描述: |
| YG855C12R | 制造商:FUJI 制造商全称:Fuji Electric 功能描述:Schottky Barrier Diode |
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