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参数资料
| 型号： | YG865C04R |
| 厂商： | FUJI ELECTRIC CO LTD |
| 元件分类： | 整流器 |
| 英文描述： | 20 A, 45 V, SILICON, RECTIFIER DIODE, TO-220AB |
| 封装： | PLASTIC, TO-220F, 3 PIN |
| 文件页数： | 2/3页 |
| 文件大小： | 128K |
| 代理商： | YG865C04R |
YG865C04R (20A)
Characteristics
(45V / 20A )
0.1
1
10
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
Tj=150
oC
Tj=125
oC
Tj=100
oC
Tj=25
oC
Forward Characteristic (typ.)
IF
F
o
rw
ar
dC
ur
re
n
t
(
A
)
VF Forward Voltage (V)
0
1020
3040
5060
10
-4
10
-3
10
-2
10
-1
10
0
10
1
Reverse Characteristic (typ.)
Tj= 25
oC
Tj=100
oC
Tj=125
oC
Tj=150
oC
IR
R
e
ve
rs
eC
ur
re
n
t
(
m
A)
VR Reverse Voltage (V)
02
468
10
12
0
2
4
6
8
10
12
14
16
Per 1element
DC
Square wave λ=180
o
Sine wave λ=180
o
Square wave λ=120
o
Square wave λ=60
o
Forward Power Dissipation (max.)
WF
F
or
w
a
rd
Pow
er
Di
ss
ipa
tion
(
W
)
Io Average Forward Current (A)
1234567890123456
360
λ
Io
020
40
60
0
1
2
3
4
Reverse Power Dissipation (max.)
α=180
o
DC
PR
R
ev
e
rs
ePow
e
rDi
ss
ip
ati
on
(
W
)
VR Reverse Voltage (V)
12345
1234
360
VR
α
0
5
10
15
20
25
30
70
80
90
100
110
120
130
140
150
λ:Conduction angle of forward current for each rectifier element
Io:Output current of center-tap full wave connection
Square wave λ=120
o
Square wave λ=60
o
Square wave λ=180
o
Sine wave λ=180
o
DC
Current Derating (Io-Tc) (max.)
T
c
C
as
eT
emp
er
atur
e
(
o C)
Io Average Output Current (A)
VR=20V
123456789012345
360
λ
Io
1
10
100
1000
10
100
1000
Junction Capacitance Characteristic (max.)
C
j
Ju
n
cti
o
nC
ap
aci
tan
ce
(
pF
)
VR Reverse Voltage (V)
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相关代理商/技术参数 |
参数描述 |
|---|---|
| YG865C06R | 制造商:FUJI 制造商全称:Fuji Electric 功能描述:Low IR Schottky barrier diode |
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| YG865C08R | 制造商:FUJI 制造商全称:Fuji Electric 功能描述:Schottky Barrier Diode |
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| YG865C10RSC-P | 制造商:Fuji Electric 功能描述: |
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