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参数资料
| 型号： | YG869C12R |
| 厂商： | FUJI ELECTRIC CO LTD |
| 元件分类： | 整流器 |
| 英文描述： | 120 V, SILICON, RECTIFIER DIODE |
| 文件页数： | 1/6页 |
| 文件大小： | 551K |
| 代理商： | YG869C12R |
1
YG869C12R
Maximum Rating and Characteristics
Maximum ratings (at Ta=25C unless otherwise specified.)
Item
Symbols
Conditions
Ratings
Units
Repetitive peak reverse voltage
VRRM
-
120
V
Average output current
Io
50Hz Square wave duty =1/2
Tc = 95C
40*
A
Non-repetitive forward surge current**
IFSM
Sine wave, 10ms 1shot
190
A
Operating junction temperature
Tj
-
150
C
Storage temperature
Tstg
-
-40 to +150
C
Note* Out put current of center tap full wave connection.
Note** Rating per element
Electrical characteristics (at Ta=25C unless otherwise specified.)
Item
Symbols
Conditions
Maximum
Units
Forward voltage***
VF
IF =20 A
0.95
V
Reverse current***
IR
VR =VRRM
200
A
Thermal resistance
Rth(j-c)
Junction to case
1.2
C/W
Note*** Rating per element
http://www.fujisemi.com
FUJI Diode
Mechanical characteristics
Item
Conditions
Maximum
Units
Mounting torque
Recommended torque
0.3 to 0.5
Nm
Approximate mass
-
1.7
g
Schottky Barrier Diode
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PDF描述 |
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| YG872C12R | 120 V, SILICON, RECTIFIER DIODE, TO-220AB |
| YG872C15R | 150 V, SILICON, RECTIFIER DIODE, TO-220AB |
| YG872C20R | 200 V, SILICON, RECTIFIER DIODE, TO-220AB |
| YG875C12R | 120 V, SILICON, RECTIFIER DIODE, TO-220AB |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| YG869C15R | 制造商:FUJI 制造商全称:Fuji Electric 功能描述:Schottky Barrier Diode |
| YG875C10R | 制造商:FUJI 制造商全称:Fuji Electric 功能描述:Ultra Low IR Schottky Barrier Diode |
| YG875C12R | 制造商:FUJI 制造商全称:Fuji Electric 功能描述:Ultra Low IR Schottky Barrier Diode |
| YG875C15R | 制造商:FUJI 制造商全称:Fuji Electric 功能描述:Ultra Low IR Schottky Barrier Diode |
| YG875C20R | 制造商:FUJI 制造商全称:Fuji Electric 功能描述:Ultra Low IR Schottky Barrier Diode |
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