参数资料
型号: YG869C15R
厂商: FUJI ELECTRIC CO LTD
元件分类: 整流器
英文描述: 150 V, SILICON, RECTIFIER DIODE
文件页数: 1/6页
文件大小: 528K
代理商: YG869C15R
1
YG869C15R
Maximum Rating and Characteristics
Maximum ratings (at Ta=25C unless otherwise specified.)
Item
Symbols
Conditions
Ratings
Units
Repetitive peak reverse voltage
VRRM
-
150
V
Average output current
Io
50Hz Square wave duty =1/2
Tc = 90C
40*
A
Non-repetitive forward surge current**
IFSM
Sine wave, 10ms 1shot
190
A
Operating junction temperature
Tj
-
150
C
Storage temperature
Tstg
-
-40 to +150
C
Note* Out put current of center tap full wave connection.
Note** Rating per element
Electrical characteristics (at Ta=25C unless otherwise specified.)
Item
Symbols
Conditions
Maximum
Units
Forward voltage***
VF
IF =20 A
0.97
V
Reverse current***
IR
VR =VRRM
200
A
Thermal resistance
Rth(j-c)
Junction to case
1.2
C/W
Note*** Rating per element
http://www.fujisemi.com
FUJI Diode
Mechanical characteristics
Item
Conditions
Maximum
Units
Mounting torque
Recommended torque
0.3 to 0.5
Nm
Approximate mass
-
1.7
g
Schottky Barrier Diode
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