参数资料
型号: ZHB6718
厂商: ZETEX PLC
元件分类: 功率晶体管
英文描述: BIPOLAR TRANSISTOR H-BRIDGE
中文描述: 2.5 A, 20 V, 4 CHANNEL, NPN AND PNP, Si, POWER TRANSISTOR
封装: SM-8, 8 PIN
文件页数: 3/8页
文件大小: 193K
代理商: ZHB6718
NPN TRANSISTORS
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C ).
PARAMETER
SYMBOL
MIN.
TYP
MAX. UNIT
CONDITIONS.
Collector-Base
Breakdown Voltage
V
(BR)CBO
20
100
V
I
C
=100
μ
A
Collector-Emitter
Breakdown Voltage
V
(BR)CEO
20
27
V
I
C
=10mA*
Emitter-Base Breakdown
Voltage
V
(BR)EBO
5
8.3
V
I
E
=100
μ
A
Collector Cut-Off Current
I
CBO
100
nA
V
CB
=16V
Emitter Cut-Off Current
I
EBO
100
nA
V
EB
=4V
Collector Emitter Cut-Off
Current
I
CES
100
nA
V
CES
=16V
Collector-Emitter
Saturation Voltage
V
CE(sat)
8
70
130
15
150
200
mV
mV
mV
I
C
=0.1A, I
B
=10mA*
I
C
=1A, I
B
=10mA*
I
C
=2.5A, I
B
=50mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
0.89
1.0
V
I
C
=2.5A, I
B
=50mA*
Base-Emitter Turn-On
Voltage
V
BE(on)
0.79
V
I
C
=2.5A, V
CE
=2V*
Static Forward Current
Transfer
Ratio
h
FE
200
300
200
400
450
360
180
I
C
=10mA, V
CE
=2V*
I
C
=100mA, V
CE
=2V*
I
C
=2A, V
CE
=2V*
I
C
=6A, V
CE
=2V*
Transition
Frequency
f
T
100
140
MHz
I
C
=50mA, V
CE
=10V
f=100MHz
Output Capacitance
C
obo
23
30
pF
V
CB
=10V, f=1MHz
Turn-On Time
t
(on)
170
ns
V
CC
=10V, I
C
=1A
I
B1
=-I
B2
=10mA
Turn-Off Time
t
(off)
400
ns
*Measured under pulsed conditions. Pulse width=300
μ
s. Duty cycle
2%.
ZHB6718
相关PDF资料
PDF描述
ZHB6790 BIPOLAR TRANSISTOR H-BRIDGE
ZHB6792 BIPOLAR TRANSISTOR H-BRIDGE
ZHCS1000 SILICON HIGH CURRENT SCHOTTKY BARRIER DIODE ”SuperBAT”
ZHCS1006 SILICON HIGH CURRENT SCHOTTKY BARRIER DIODE ”SuperBAT”
ZHCS2000 40V SILICON HIGH CURRENT SCHOTTKY BARRIER DIODE
相关代理商/技术参数
参数描述
ZHB6718 制造商:Diodes Incorporated 功能描述:TRANSISTOR ARRAY H-BRIDGE
ZHB6718TA 功能描述:两极晶体管 - BJT H-Bridge-20V RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2
ZHB6718TC 功能描述:两极晶体管 - BJT H-Bridge-20V RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2
ZHB6790 制造商:Diodes Incorporated 功能描述:TRANSISTOR ARRAY H-BRIDGE
ZHB6790 制造商:Diodes Incorporated 功能描述:TRANSISTOR ARRAY H-BRIDGE