参数资料
型号: ZHB6792
厂商: ZETEX PLC
元件分类: 功率晶体管
英文描述: BIPOLAR TRANSISTOR H-BRIDGE
中文描述: 1 A, 70 V, 4 CHANNEL, NPN AND PNP, Si, POWER TRANSISTOR
封装: SM-8, 8 PIN
文件页数: 4/7页
文件大小: 100K
代理商: ZHB6792
ZHB6792
PNP TRANSISTORS
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C)
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
CONDITIONS.
Collector-Base Breakdown
Voltage
V
(BR)CBO
-75
V
I
C
=-100
μ
A
Collector-Emitter
Breakdown Voltage
V
(BR)CEO
-70
V
I
C
=-10mA*
Emitter-Base Breakdown
Voltage
V
(BR)EBO
-5
V
I
E
=-100
μ
A
Collector Cut-Off Current
I
CBO
-0.1
μ
A
V
CB
=-40V
Emitter Cut-Off Current
I
EBO
-0.1
μ
A
V
EB
=-4V
Collector-Emitter
Saturation Voltage
V
CE(sat)
-0.45
-0.5
V
V
I
C
=-500mA, I
=-5mA*
I
C
=-1A, I
B
=-25mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
-0.95
V
I
C
=-1A, I
B
=-25mA*
Base-Emitter
Turn-On Voltage
V
BE(on)
-0.75
V
I
C
=-1A, V
CE
=-2V*
Static Forward Current
Transfer
h
FE
300
250
200
800
I
C
=-10mA, V
CE
=-2V*
I
C
=-500mA, V
=-2V*
I
C
=-1A, V
CE
=-2V*
Transition Frequency
f
T
100
MHz
I
=-50mA, V
CE
=-5V
f=50MHz
Input Capacitance
C
ibo
225
pF
V
EB
=-0.5V, f=1MHz
Output Capacitance
C
obo
22
pF
V
CB
=-10V, f=1MHz
Switching Times
t
on
t
off
35
750
ns
ns
I
C
=-500mA,
I
B1
=-50mA
I
B2
=-50mA, V
CC
=-10V
*Measured under pulsed conditions. Pulse width=300
μ
s. Duty cycle
2%
相关PDF资料
PDF描述
ZHCS1000 SILICON HIGH CURRENT SCHOTTKY BARRIER DIODE ”SuperBAT”
ZHCS1006 SILICON HIGH CURRENT SCHOTTKY BARRIER DIODE ”SuperBAT”
ZHCS2000 40V SILICON HIGH CURRENT SCHOTTKY BARRIER DIODE
ZHCS2000TA 40V SILICON HIGH CURRENT SCHOTTKY BARRIER DIODE
ZHCS2000TC 40V SILICON HIGH CURRENT SCHOTTKY BARRIER DIODE
相关代理商/技术参数
参数描述
ZHB6792TA 功能描述:两极晶体管 - BJT H-Bridge-70V RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2
ZHB6792TC 功能描述:两极晶体管 - BJT H-Bridge-70V RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2
ZHBTGFR421 制造商:Seoul Semiconductor 功能描述:(1.6*1.5*0.5) - Tape and Reel
ZH-C-125-WT 制造商:Brady Corporation 功能描述:0.125 IN H X 100 FT (3.200 MM H X 30.48 M W)
ZH-C-125-WT-J 制造商:Brady Corporation 功能描述:0.125 IN H X 225 FT (3.200 MM H X 68.6 M W)