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参数资料
| 型号： | ZHCS750 |
| 厂商： | ZETEX PLC |
| 元件分类： | 参考电压二极管 |
| 英文描述： | SILICON HIGH CURRENT SCHOTTKY BARRIER DIODE “SuperBAT” |
| 中文描述： | SILICON, SIGNAL DIODE |
| 封装： | SOT-23, 3 PIN |
| 文件页数： | 1/3页 |
| 文件大小： | 165K |
| 代理商： | ZHCS750 |
SOT23 SILICON HIGH CURRENT
SCHOTTKY BARRIER DIODE “SuperBAT”
ISSUE 2 - October 1997
%
FEATURES:
*
*
Low V
High Current Capability
APPLICATIONS:
*
DC - DC converters
*
Mobile telecomms
*
PCMCIA
PARTMARK DETAIL: ZS7
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Continuous Reverse Voltage
V
R
I
F
V
F
I
FAV
I
FSM
40
V
Forward Current (Continuous)
750
mA
Forward Voltage @ I
F
= 750mA
Average Peak Forward Current; D.C. = 50%
490
mV
1500
mA
Non Repetitive Forward Current t
≤
100
μ
s
t
≤
10ms
12
5.2
A
A
Power Dissipation at T
amb
= 25° C
Storage Temperature Range
P
tot
T
stg
T
j
500
mW
-55 to + 150
° C
Junction Temperature
125
° C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25° C unless otherwise stated).
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
CONDITIONS.
Reverse Breakdown
Voltage
V
(BR)R
40
60
V
I
R
= 300
μ
A
Forward Voltage
V
F
225
235
290
340
390
440
530
280
310
350
420
490
540
650
mV
mV
mV
mV
mV
mV
mV
I
F
= 50mA*
I
F
= 100mA*
I
F
= 250mA*
I
F
= 500mA*
I
F
= 750mA*
I
F
= 1000mA*
I
F
= 1500mA*
Reverse Current
I
R
50
100
μ
A
V
R
= 30V
Diode Capacitance
C
D
t
rr
25
pF
f= 1MHz,V
R
= 25V
switched from
I
= 500mA to I
= 500mA
Measured at I
R
= 50mA
Reverse Recovery
Time
12
ns
*Measured under pulsed conditions. Pulse width= 300
μ
s; duty cycle
≤
2%.
ZHCS750
1
3
C
1
A
3
2
SOT23
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相关代理商/技术参数 |
参数描述 |
|---|---|
| ZHCS750/TA | 制造商:未知厂家 制造商全称:未知厂家 功能描述:DIODE SCHOTTKY SOT-23 |
| ZHCS750TA | 功能描述:肖特基二极管与整流器 VR=40V IF=750mA IR=100uA RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| ZHCS750TC | 功能描述:肖特基二极管与整流器 VR=40V IF=750mA IR=100uA RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| ZHCS756 | 制造商:Diodes Incorporated 功能描述:DIODE SCHOTTKY SOT-23 |
| ZHCS756 | 制造商:Diodes Incorporated 功能描述:DIODE SCHOTTKY SOT-23 |
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