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| 型号： | ZL6100EVAL1Z |
| 厂商： | Intersil |
| 文件页数： | 20/34页 |
| 文件大小： | 0K |
| 描述： | EVAL BOARD USB ZL6100 |
| 标准包装： | 1 |
| 系列： | * |
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ZL6100
Where:
I LIM is the desired maximum current that should flow in the
circuit
GH
V IN
R SENSE is the resistance of the sensing element
V LIM is the voltage across the sensing element at the point
the circuit should start limiting the output current.
ZL6100
SW
ISENA
GL
V OUT
The ZL6100 supports “lossless” current sensing by
measuring the voltage across a resistive element that is
already present in the circuit. This eliminates additional
efficiency losses incurred by devices that must use an
additional series resistance in the circuit.
To set the current limit threshold, the user must first select a
ISENB
MOSFET R DS(ON) SENSING
V IN
GH
current sensing method. The ZL6100 incorporates two
methods for current sensing, synchronous MOSFET r DS(ON)
ZL6100
SW
V OUT
sensing and inductor DC resistance (DCR) sensing;
Figure 15 shows a simplified schematic for each method.
The current sensing method can be selected using the ILIM1
pin using Table 15. The ILIM0 pin must have a finite resistor
connected to ground in order for Table 15 to be valid. If no
resistor is connected between ILIM0 and ground, the default
method is MOSFET r DS(ON) sensing. The current sensing
method can be modified via the I 2 C/SMBus interface. Please
refer to Application Note AN2033 for details.
In addition to selecting the current sensing method, the
GL
ISENA
ISENB
INDUCTOR DCR SENSING
(V OUT MUST BE LESS THAN 4.0V)
FIGURE 15. CURRENT SENSING METHODS
the fault response during over or undercurrent condition. The
user can select the number of violations allowed before
declaring fault, a blanking time and the action taken when a
fault is detected.
ZL6100 gives the power supply designer several choices for
TABLE 15. RESISTOR SETTINGS FOR CURRENT SENSING
NUMBER OF
VIOLATIONS
ILIM0 PIN
ALLOWED
(Note 23)
R ILIM0
ILIM1 PIN
LOW
CURRENT LIMITING CONFIGURATION
Ground-referenced, r DS(ON) , sensing
(Note 24)
5
COMMENTS
Best for low duty cycle and low f SW
Blanking time: 672ns
R ILIM0
OPEN
Output-referenced, down-slope sensing (Inductor
5
Best for low duty cycle and high
DCR sensing) Blanking time: 352ns
f SW
R ILIM0
HIGH
Output-referenced, up-slope sensing (Inductor DCR
5
Best for high duty cycle
sensing) Blanking time: 352ns
Resistor
Depends on resistor value used; see Table 16
NOTES:
23. 10k Ω < R ILIM0 < 100k Ω
24. The number of violations allowed prior to issuing a fault response.
20
FN6876.3
August 29, 2012
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相关代理商/技术参数 |
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