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参数资料
| 型号： | ZNBG3010Q16TC |
| 厂商： | Diodes Inc |
| 文件页数： | 2/10页 |
| 文件大小： | 0K |
| 描述： | IC GENERATOR 3BIAS 2.2V 16-QSOP |
| 标准包装： | 2,500 |
| 功能： | 偏压控制器 |
| RF 型： | LNBs，PMR |
| 封装/外壳： | 16-SSOP（0.154"，3.90mm 宽） |
| 包装： | 带卷 (TR) |
ZNBG3010
ZNBG3011
ABSOLUTE MAXIMUM RATINGS
Supply Voltage
Supply Current
Input Voltage (V POL )
Drain Current (per FET)
(set by R CAL )
Operating Temperature
Storage Temperature
-0.6V to 12V
100mA
25V Continuous
0 to 15mA
-40 to 70°C
-50 to 85°C
Power Dissipation (T amb = 25°C)
QSOP16 500mW
ELECTRICAL CHARACTERISTICS TEST CONDITIONS
(Unless otherwise stated):T amb = 25°C,V CC =5V,I D =10mA (R CAL =33k ? )
SYMBOL PARAMETER
CONDITIONS
MIN.
LIMITS
TYP.
MAX.
UNITS
V CC
I CC
Supply Voltage
Supply Current
I D1 to I D3 =0
I D2 and I D3 =10mA, V POL =14V
I D1 and I D3 =10mA, V POL =15.5V
5
10
10
30
30
V
mA
mA
mA
V SUB
Substrate Voltage I SUB =0
(Internally generated) I SUB =-200 μ A
-3.5
-3.0
-2
-2
V
V
Output Noise
E ND
E NG
Drain Voltage
Gate Voltage
C G =4.7nF, C D =10nF
C G =4.7nF, C D =10nF
0.02
0.005
Vpkpk
Vpkpk
f O
Oscillator Frequency
200
350
800
kHz
GATE CHARACTERISTICS
I GO
Output Current Range
I Dx
(mA)
V POL
(V)
I GOx
( μ A)
-30
2000
μ A
Output Voltage
V G1O
V G1L
V G1H
Gate 1 Off
Low
High
I D1 =0 V POL =14 I GO1 =-10
I D1 =12 V POL =15.5 I GO1 =-10
I D1 =8 V POL =15.5 I GO1 =0
-3.5
-3.5
0.4
-2.9
-2.9
0.75
-2.0
-2.0
1.0
V
V
V
Output Voltage
V G2O
V G2L
V G2H
Gate 2 Off
Low
High
I D2 =0 V POL =15.5 I GO2 =-10
I D2 =12 V POL =14 I GO2 =-10
I D2 =8 V POL =14 I GO2 =0
-3.5
-3.5
0.4
-2.9
-2.9
0.75
-2.0
-2.0
1.0
V
V
V
Output Voltage
V G3L
V G3H
Gate 3 Low
High
I D3 =12
I D3 =8
I GO3 =-10
I GO3 =0
-3.5
0.4
-2.9
0.75
-2.0
1.0
V
V
4-115
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