参数资料
型号: ZNBG3010Q16TC
厂商: Diodes Inc
文件页数: 5/10页
文件大小: 0K
描述: IC GENERATOR 3BIAS 2.2V 16-QSOP
标准包装: 2,500
功能: 偏压控制器
RF 型: LNBs,PMR
封装/外壳: 16-SSOP(0.154",3.90mm 宽)
包装: 带卷 (TR)
ZNBG3010
ZNBG3011
FUNCTIONAL DIAGRAM
FUNCTIONAL DESCRIPTION
The ZNBG devices provide all the bias requirements for external FETs, including the generation
of the negative supply required for gate biasing, from the single supply voltage.The diagram
above shows a single stage from the ZNBG series. The ZNBG3010/11 contains 3 such stages. The
negative rail generator is common to both devices.
The drain voltage of the external FET Q N is set by the ZNBG device to its normal operating voltage.
This is determined by the on board V D Set reference, for the ZNBG3010 this is nominally 2.2 volts
whilst the ZNBG3011 provides nominally 2 volts.
The drain current taken by the FET is monitored by the low value resistor I D Sense. The amplifier
driving the gate of the FET adjusts the gate voltage of Q N so that the drain current taken matches
the current called for by an external resistor R CAL .
Since the FET is a depletion mode transistor, it is often necessary to drive its gate negative with
respect to ground to obtain the required drain current. To provide this capability powered from
a single positive supply, the device includes a low current negative supply generator. This
generator uses an internal oscillator and two external capacitors, C NB and C SUB .
4-118
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