参数资料
型号: ZVP2120GTC
厂商: Diodes Inc
文件页数: 1/3页
文件大小: 0K
描述: MOSFET P-CHAN 200V SOT223
标准包装: 4,000
FET 型: MOSFET P 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 200V
电流 - 连续漏极(Id) @ 25° C: 200mA
开态Rds(最大)@ Id, Vgs @ 25° C: 25 欧姆 @ 150mA,10V
Id 时的 Vgs(th)(最大): 3.5V @ 1mA
输入电容 (Ciss) @ Vds: 100pF @ 25V
功率 - 最大: 2W
安装类型: 表面贴装
封装/外壳: TO-261-4,TO-261AA
包装: 带卷 (TR)
SOT223 P-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ZVP2120G
ISSUE 3 - OCTOBER 1995
FEATURES
* 200 Volt V DS
* R DS(on) =25 ?
7
D
PARTMARKING DETAIL ?
COMPLEMENTARY TYPE ?
ZVP2120
ZVN2120G
D
S
G
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Drain-Source Voltage
Continuous Drain Current at T amb =25°C
Pulsed Drain Current
Gate Source Voltage
Power Dissipation at T amb =25°C
Operating and Storage Temperature Range
SYMBOL
V DS
I D
I DM
V GS
P tot
T j :T stg
VALUE
-200
-200
-1.2
± 20
2
-55 to +150
UNIT
V
mA
A
V
W
°C
ELECTRICAL CHARACTERISTICS (at T amb = 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.
Drain-Source
Breakdown Voltage
BV DSS
-200
V
I D =-1mA, V GS =0V
Gate-Source Threshold
Voltage
V GS(th)
-1.5
-3.5
V
I D =-1mA, V DS = V GS
Gate-Body Leakage
Zero Gate Voltage Drain
Current
On-State Drain Current(1)
Static Drain-Source On-State
Resistance (1)
Forward Transconductance
(1)(2)
Input Capacitance (2)
Common Source Output
Capacitance (2)
I GSS
I DSS
I D(on)
R DS(on)
g fs
C iss
C oss
-300
50
-20
-10
-100
25
100
25
nA
μ A
μ A
mA
?
mS
pF
pF
V GS = ± 20V, V DS =0V
V DS =-200 V, V GS =0
V DS =-160 V, V GS =0V, T=125°C
(2)
V DS =-25 V, V GS =-10V
V GS =-10V, I D =-150mA
V DS =-25V, I D =-150mA
V DS =-25V, V GS =0V, f=1MHz
Reverse Transfer Capacitance (2) C rss
7
pF
Turn-On Delay Time (2)(3)
t d(on)
7
ns
Rise Time (2)(3)
Turn-Off Delay Time (2)(3)
Fall Time (2)(3)
t r
t d(off)
t f
15
12
15
ns
ns
ns
V DD ≈ -25V, I D =-150mA
(1) Measured under pulsed conditions. Width=300 μ s. Duty cycle ≤ 2% (2) Sample test.
(3) Switching times measured with 50 ? source impedance and <5ns rise time on a pulse generator
3 - 431
相关PDF资料
PDF描述
ZVP3306ASTZ MOSFET P-CHAN 60V TO92-3
ZVP3306FTC MOSFET P-CHAN 60V SOT23-3
ZVP3310ASTZ MOSFET P-CHAN 100V TO92-3
ZVP4105ASTZ MOSFET P-CHAN 50V TO92-3
ZVP4424ASTOB MOSFET P-CHAN 240V TO92-3
相关代理商/技术参数
参数描述
ZVP2120L 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 200V V(BR)DSS | 300MA I(D) | TO-220
ZVP2120Z 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 200V V(BR)DSS | 170MA I(D) | SOT-89
ZVP3306 制造商:ZETEX 制造商全称:ZETEX 功能描述:P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET
ZVP3306A 功能描述:MOSFET P-Chnl 60V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
ZVP3306A 制造商:Diodes Incorporated 功能描述:MOSFET P E-LINE