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参数资料
| 型号： | ZXGD3004E6TA |
| 厂商： | Diodes Inc |
| 文件页数： | 1/8页 |
| 文件大小： | 0K |
| 描述： | IC GATE DRVR IGBT/MOSFET SOT23-6 |
| 标准包装： | 1 |
| 配置： | 低端 |
| 输入类型： | 非反相 |
| 延迟时间： | 1.1ns |
| 电流 - 峰： | 8A |
| 配置数： | 1 |
| 输出数： | 1 |
| 电源电压： | 40V |
| 工作温度： | -55°C ~ 150°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | SOT-23-6 |
| 供应商设备封装： | SOT-23-6 |
| 包装： | 标准包装 |
| 产品目录页面： | 1479 (CN2011-ZH PDF) |
| 其它名称： | ZXGD3004E6DKR |
ZXGD3004E6
8A(peak) gate driver in SOT23-6
General description
The ZXGD3004E6 is a high-speed non-inverting single MOSFET gate driver capable of driving up to 8A into
a MOSFET or IGBT gate capacitive load from supply voltages up to 40V. With typical propagation delay
times down to ~1ns and rise/fall times down to 14ns this device ensures rapid switching of the power
MOSFET or IGBT to minimize power losses and distortion in high current fast switching applications.
The ZXGD3004E6 is inherently rugged to latch-up and shoot-through, and its wide supply voltage range
allows full enhancement to minimize on-losses of the power MOSFET or IGBT.
Its low input voltage requirement and high current gain allows high current driving from low voltage
controller ICs, and the optimized pin-out SOT23-6 package with separate source and sink pins eases board
layout, enabling reduced parasitic inductance and independent control of rise and fall slew rates.
Features
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40V operating voltage range
8 amps peak output current
Fast switching emitter-follower configuration
? 1ns propagation delay time
? 14ns rise/fall time, 1500pF load
Low input current requirement
? 1.9A(source)/1.9A(sink) output current from 10mA input
SOT23-6 package
Separate source and sink outputs for independent control of rise and fall time
Optimized pin-out to ease board layout and minimize trace inductance
No Latch Up
No shoot through
Near - Zero quiescent and output leakage current
Typical application circuit
V S
V CC
V CC
Input
IN 1
ZXGD3004
SOURCE
Issue 1 - October 2007
? Zetex Semiconductors plc 2007
IN 2
GND
1
SINK
www.zetex.com
相关PDF资料 |
PDF描述 |
|---|---|
| ZXGD3005E6TA | IC GATE DVR IGBT/MOSFET SOT26 |
| ZXGD3101N8TC | IC SYNCH MOSFET CNTRLR 4A SO8 |
| ZXGD3101T8TA | IC FLYBACK CONVERTER SOT223-8 |
| ZXGD3103N8TC | IC SYNCH MOSFET CNTRLR 4A SO8 |
| ZXGD3104N8TC | IC SYNCH MOSFET CNTLR SO8 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| ZXGD3005E6 | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:10A (PEAK) GATE DRIVER IN SOT26 |
| ZXGD3005E6_11 | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:25V 10A GATE DRIVER IN SOT26 |
| ZXGD3005E6TA | 功能描述:MOSFET 10A GATE DRIVER 25V VCC 25V VIN RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| ZXGD3006E6 | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:40V 10A GATE DRIVER IN SOT26 |
| ZXGD3006E6TA | 功能描述:变换器 Transistor Gate RoHS:否 制造商:NXP Semiconductors 电路数量:6 逻辑系列:74ABT 逻辑类型:BiCMOS 高电平输出电流:- 15 mA 低电平输出电流:20 mA 传播延迟时间:2.2 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 最大工作温度:+ 85 C 最小工作温度:- 40 C 工作温度范围: 封装 / 箱体:DIP-14 封装:Tube |
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