参数资料
型号: ZXLD1370EST16TC
厂商: Diodes Inc
文件页数: 22/39页
文件大小: 0K
描述: IC LED DRVR HIGH BRIGHT TSSOP-16
特色产品: ZXLD1370 High Accuracy LED Driver
标准包装: 1
恒定电流:
拓扑: PWM,降压(降压),升压(升压)
输出数: 1
内部驱动器:
类型 - 主要: 车载,通用
类型 - 次要: 高亮度 LED(HBLED)
频率: 300kHz ~ 1MHz
电源电压: 6 V ~ 60 V
安装类型: 表面贴装
封装/外壳: 16-TSSOP(0.173",4.40mm)裸露焊盘
供应商设备封装: 16-TSSOP-EP
包装: 标准包装
工作温度: -40°C ~ 125°C
产品目录页面: 1478 (CN2011-ZH PDF)
其它名称: ZXLD1370EST16TCDKR
A Product Line of
Diodes Incorporated
ZXLD1370
Application Information (cont.)
MOSFET Selection
The ZXLD1370 requires an external NMOS FET as the main power switch with a voltage rating at least 15% higher than the maximum circuit
voltage to ensure safe operation during the overshoot and ringing of the switch node. The current rating is recommended to be at least 10%
higher than the average transistor current. The power rating is then verified by calculating the resistive and switching power losses.
P = P RESISTIVE + P SWITCHING
Resistive Power Losses
The resistive power losses are calculated using the RMS transistor current and the MOSFET on-resistance.
Calculate the current for the different topologies as follows:
Buck Mode
I MOSFET ? MAX = D MAX x I LED
Boost / Buck-Boost Mode
I MOSFET ? MAX =
D MAX
1 ? D MAX
× i LED
The approximate RMS current in the MOSFET will be:
Buck Mode
I MOSFET
? RMS
= I LED D
Boost / Buck-Boost Mode
I MOSFET
? RMS
=
D
1 ? D
x I LED
The resistive power dissipation of the MOSFET is:
P RESISTIVE = I MOSFET ? RMS 2 x R DS ? ON
Switching Power Losses
Calculating the switching MOSFET's switching loss depends on many factors that influence both turn-on and turn-off. Using a first order rough
approximation, the switching power dissipation of the MOSFET is:
P SWITCHING =
C RSS x V 2 IN x f sw x I LOAD
I GATE
where
C RSS is the MOSFET's reverse-transfer capacitance (a data sheet parameter),
f SW is the switching frequency,
I GATE is the MOSFET gate-driver's sink/source current at the MOSFET's turn-on threshold.
ZXLD1370
Document number: DS32165 Rev. 5 - 2
22 of 39
www.diodes.com
September 2012
? Diodes Incorporated
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