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| 型号： | ZXLD1370EST16TC |
| 厂商： | Diodes Inc |
| 文件页数： | 23/39页 |
| 文件大小： | 0K |
| 描述： | IC LED DRVR HIGH BRIGHT TSSOP-16 |
| 特色产品： | ZXLD1370 High Accuracy LED Driver |
| 标准包装： | 1 |
| 恒定电流： | 是 |
| 拓扑： | PWM，降压（降压），升压（升压） |
| 输出数： | 1 |
| 内部驱动器： | 无 |
| 类型 - 主要： | 车载，通用 |
| 类型 - 次要： | 高亮度 LED（HBLED） |
| 频率： | 300kHz ~ 1MHz |
| 电源电压： | 6 V ~ 60 V |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 16-TSSOP（0.173"，4.40mm）裸露焊盘 |
| 供应商设备封装： | 16-TSSOP-EP |
| 包装： | 标准包装 |
| 工作温度： | -40°C ~ 125°C |
| 产品目录页面： | 1478 (CN2011-ZH PDF) |
| 其它名称： | ZXLD1370EST16TCDKR |
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A Product Line of
Diodes Incorporated
ZXLD1370
Application Information (cont.)
Matching the MOSFET with the controller is primarily based on the rise and fall time of the gate voltage. The best rise/fall time in the application
is based on many requirements, such as EMI (conducted and radiated), switching losses, lead/circuit inductance, switching frequency, etc. How
fast a MOSFET can be turned on and off is related to how fast the gate capacitance of the MOSFET can be charged and discharged. The
relationship between C (and the relative total gate charge Qg), turn-on/turn-off time and the MOSFET driver current rating can be written as:
dt =
dV ? C
I
=
Qg
I
where
dt = turn-on/turn-off time
dV = gate voltage
C = gate capacitance = Qg/V
I = drive current – constant current source (for the given voltage value)
Here the constant current source” I ” usually is approximated with the peak drive current at a given driver input voltage.
(Example 1)
Using the DMN6068 MOSFET (V DS(MAX) = 60V, I D(MAX) = 8.5A):
Q G = 10.3nC at V GS = 10V
ZXLD1370 I PEAK = I GATE = 300mA
dt =
Q g
I PEAK
=
10.3nC
300 mA
= 35 ns
Assuming that cumulatively the rise time and fall time can account for a maximum of 10% of the period, the maximum frequency allowed in this
condition is:
t PERIOD = 20*dt
f = 1/ t PERIOD = 1.43MHz
This frequency is well above the max frequency the device can handle, therefore the DNM6068 can be used with the ZXLD1370 in the whole
spectrum of frequencies recommended for the device (from 300kHz to 1MHz).
(Example 2)
Using the ZXMN6A09K (V DS(MAX) = 60V, I D(MAX) = 12.2A):
Q G = 29nC at V GS = 10V
ZXLD1370 I PEAK = 300mA
dt =
Q g
I PEAK
=
29 nC
300 mA
= 97 ns
Assuming that cumulatively the rise time and fall time can account for a maximum of 10% of the period, the maximum frequency allowed in this
condition is:
t PERIOD = 20*dt
f = 1/ t PERIOD = 515kHz
This frequency is within the recommended frequency range the device can handle, therefore the ZXMN6A09K is recommended to be used with
the ZXLD1370 for frequencies from 300kHz to 500kHz).
The recommended total gate charge for the MOSFET used in conjunction with the ZXLD1370 is less than 30nC.
ZXLD1370
Document number: DS32165 Rev. 5 - 2
23 of 39
www.diodes.com
September 2012
? Diodes Incorporated
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相关代理商/技术参数 |
参数描述 |
|---|---|
| ZXLD1371 | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:60V HIGH ACCURACY BUCK/BOOST/BUCK-BOOST LED DRIVER-CONTROLLER |
| ZXLD1371EST16TC | 功能描述:MOSFET LED Controller TSSOP TSSOP-16EP T&R 2.5K RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| ZXLD1371QESTTC | 功能描述:MOSFET LED Controller TSSOP TSSOP-16EP T&R 2.5K RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| ZXLD1374 | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:60V HIGH ACCURACY 1.5A BUCK/BOOST/BUCK-BOOST |
| ZXLD1374_11 | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:60V HIGH ACCURACY 1.5A BUCK/BOOST/BUCK-BOOST |
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