参数资料
型号: ZXM61N02FTC
厂商: Diodes Inc
文件页数: 1/7页
文件大小: 0K
描述: MOSFET N-CHAN 20V SOT23-3
标准包装: 10,000
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 20V
电流 - 连续漏极(Id) @ 25° C: 1.7A
开态Rds(最大)@ Id, Vgs @ 25° C: 180 毫欧 @ 930mA,4.5V
Id 时的 Vgs(th)(最大): 700mV @ 250µA
闸电荷(Qg) @ Vgs: 3.4nC @ 4.5V
输入电容 (Ciss) @ Vds: 160pF @ 15V
功率 - 最大: 625mW
安装类型: 表面贴装
封装/外壳: TO-236-3,SC-59,SOT-23-3
供应商设备封装: SOT-23-3
包装: 带卷 (TR)
ZXM61N02F
20V N-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY
V (BR)DSS =20V; R DS(ON) =0.18 ; I D =1.7A
DESCRIPTION
This new generation of high density MOSFETs from Zetex utilises a unique
structure that combines the benefits of low on-resistance with fast switching
speed. This makes them ideal for high efficiency, low voltage, power
management applications.
SOT23
FEATURES
?
Low on-resistance
?
Fast switching speed
?
Low threshold
?
Low gate drive
?
SOT23 package
APPLICATIONS
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DC - DC Converters
?
Power Management Functions
?
Disconnect switches
?
Motor control
ORDERING INFORMATION
DEVICE
REEL SIZE
(inches)
TAPE WIDTH (mm)
QUANTITY
PER REEL
Top View
ZXM61N02FTA
ZXM61N02FTC
7
13
8mm embossed
8mm embossed
3000 units
10000 units
DEVICE MARKING
?
N02
ISSUE 1 - JUNE 2004
1
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相关代理商/技术参数
参数描述
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ZXM61N03FTC 功能描述:MOSFET 30V N Chnl HDMOS RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube