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参数资料
| 型号： | ZXM61N02FTC |
| 厂商： | Diodes Inc |
| 文件页数： | 2/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CHAN 20V SOT23-3 |
| 标准包装： | 10,000 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 1.7A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 180 毫欧 @ 930mA，4.5V |
| Id 时的 Vgs(th)（最大）： | 700mV @ 250µA |
| 闸电荷(Qg) @ Vgs： | 3.4nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 160pF @ 15V |
| 功率 - 最大： | 625mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-236-3，SC-59，SOT-23-3 |
| 供应商设备封装： | SOT-23-3 |
| 包装： | 带卷 (TR) |
ZXM61N02F
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-Source Voltage
V DSS
20
V
Gate Source Voltage
V GS
± 12
V
Continuous Drain Current (V GS =4.5V; T A =25°C)(b)
I D
1.7
A
(V GS =4.5V; T A =70°C)(b)
1.3
Pulsed Drain Current (c)
I DM
7.4
A
Continuous Source Current (Body Diode) (b)
I S
0.8
A
Pulsed Source Current (Body Diode)
I SM
7.4
A
Power Dissipation at T A =25°C (a)
P D
625
mW
Linear Derating Factor
5
mW/°C
Power Dissipation at T A =25°C (b)
P D
806
mW
Linear Derating Factor
6.4
mW/°C
Operating and Storage Temperature Range
T j :T stg
-55 to +150
°C
THERMAL RESISTANCE
PARAMETER
Junction to Ambient (a)
Junction to Ambient (b)
SYMBOL
R θ JA
R θ JA
VALUE
200
155
UNIT
°C/W
°C/W
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper,
in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t 5 secs.
(c) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal
Impedance graph.
ISSUE 1 - JUNE 2004
2
相关PDF资料 |
PDF描述 |
|---|---|
| ZXM61N03FTC | MOSFET N-CHAN 30V SOT23-3 |
| ZXM61P02FTC | MOSFET P-CHAN 20V SOT23-3 |
| ZXM61P03FTC | MOSFET P-CHAN 30V SOT23-3 |
| ZXM62N03GTA | MOSFET N-CH 30V ENHANCE SOT223 |
| ZXM62P02E6TA | MOSFET P-CH 20V 2.3A SOT23-6 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| ZXM61N03F | 制造商:Diodes Incorporated 功能描述:MOSFET N SOT-23 制造商:Diodes Incorporated 功能描述:MOSFET, N, SOT-23 制造商:DIODES 功能描述:MOSFET, N, SOT-23, Transistor Polarity:N Channel, Continuous Drain Current Id:1. 制造商:Diodes Incorporated 功能描述:MOSFET, N CH, 30V, 1.4A, SOT-23, Transistor Polarity:N Channel, Continuous Drain Current Id:1.4A, Drain Source Voltage Vds:30V, On Resistance Rds(on):220mohm, Rds(on) Test Voltage Vgs:10V, Threshold Voltage Vgs:1V, No. of Pins:3 , RoHS Compliant: Yes |
| ZXM61N03F_04 | 制造商:ZETEX 制造商全称:ZETEX 功能描述:30V N-CHANNEL ENHANCEMENT MODE MOSFET |
| ZXM61N03FTA | 功能描述:MOSFET 30V N-Chnl HDMOS RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| ZXM61N03FTA-CUT TAPE | 制造商:DIODES 功能描述:ZXM61N03F 30 V 0.22 Ohm N-Channel Enhancement Mode Vertical DMOS FET - SOT-23 |
| ZXM61N03FTC | 功能描述:MOSFET 30V N Chnl HDMOS RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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