参数资料
型号: ZXM64N02XTC
厂商: Diodes Inc
文件页数: 1/7页
文件大小: 0K
描述: MOSFET N-CHAN 20V MSOP8
标准包装: 4,000
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 20V
电流 - 连续漏极(Id) @ 25° C: 5.4A
开态Rds(最大)@ Id, Vgs @ 25° C: 40 毫欧 @ 3.8A,4.5V
Id 时的 Vgs(th)(最大): 700mV @ 250µA
闸电荷(Qg) @ Vgs: 16nC @ 4.5V
输入电容 (Ciss) @ Vds: 1100pF @ 15V
功率 - 最大: 1.1W
安装类型: 表面贴装
封装/外壳: 8-TSSOP,8-MSOP(0.118",3.00mm 宽)
供应商设备封装: 8-MSOP
包装: 带卷 (TR)
ZXM64N02X
20V N-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY
V (BR)DSS =20V; R DS(ON) =0.040 ?; I D =5.4A
DESCRIPTION
This new generation of high density MOSFETs from Zetex utilises a unique
structure that combines the benefits of low on-resistance with fast switching
speed. This makes them ideal for high efficiency, low voltage, power
management applications.
MSOP8
FEATURES
?
Low on-resistance
?
Fast switching speed
?
Low threshold
?
Low gate drive
?
Low profile SOIC package
APPLICATIONS
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DC - DC Converters
?
Power Management Functions
?
Disconnect switches
?
Motor control
S
D
ORDERING INFORMATION
S
D
DEVICE
REEL SIZE
(inches)
TAPE WIDTH (mm)
QUANTITY
PER REEL
S
D
G
D
ZXM64N02XTA
ZXM64N02XTC
7
13
12mm embossed
12mm embossed
1000 units
4000 units
Top View
DEVICE MARKING
?
ZXM 6 4N02
I ssue 2 - February 2008
1
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