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| 型号： | ZXM64P03XTC |
| 厂商： | Diodes Inc |
| 文件页数： | 1/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CHAN 30V MSOP8 |
| 标准包装： | 4,000 |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 3.8A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 75 毫欧 @ 2.4A，10V |
| Id 时的 Vgs(th)（最大）： | 1V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 46nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 825pF @ 25V |
| 功率 - 最大： | 1.1W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-TSSOP，8-MSOP（0.118"，3.00mm 宽） |
| 供应商设备封装： | 8-MSOP |
| 包装： | 带卷 (TR) |
A Product Line of
Diodes Incorporated
ZXM64P03X
30V P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features
V (BR)DSS
-30V
Description
Max R DS(on)
75m Ω @ V GS = -10V
100m Ω @ V GS = -4.5V
Max I D
T A = 25 ° C
-3.8A
-3.3A
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Fast switching speed
Low on-resistance
Low threshold
Low gate drive
Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
This MOSFET utilizes a unique structure that combines the benefits
of low on-resistance with fast switching speed, making it ideal for
high-efficiency power management applications.
Mechanical Data
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Case: MSOP8
Applications
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Case Material: Molded Plastic, UL Flammability Classification
Rating 94V-0
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DC - DC converters
Power management functions
Disconnect switches
Motor control
MSOP8
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Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Matte Tin Finish; Solderable per MIL-STD-202,
Method 208
Weight: 0.028 grams (approximate)
D
G
S
Top View
Top View
Equivalent Circuit
Pin Out
Ordering Information (Note 4)
Product
ZXM64P03XTA
Marking
ZXM64P03
Reel size (inches)
7
Tape width (mm)
12
Quantity per reel
1,000 Units
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. ?
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com.
Marking Information
ZXM64P03 = Product Type Marking Code
ZXM64P03X
Document Number DS33487 Rev. 2 - 2
1 of 7
www.diodes.com
October 2012
? Diodes Incorporated
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相关代理商/技术参数 |
参数描述 |
|---|---|
| ZXM66N02N8TA | 功能描述:MOSFET N-CHAN HD 20V 8-SOIC RoHS:否 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| ZXM66N03N8 | 制造商:ZETEX 制造商全称:ZETEX 功能描述:30V N-CHANNEL ENHANCEMENT MODE MOSFET |
| ZXM66N03N8TA | 功能描述:MOSFET N-CHAN HD 30V 8-SOIC RoHS:否 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| ZXM66P02N8 | 制造商:ZETEX 制造商全称:ZETEX 功能描述:20V P-CHANNEL ENHANCEMENT MODE MOSFET |
| ZXM66P02N8_04 | 制造商:ZETEX 制造商全称:ZETEX 功能描述:20V P-CHANNEL ENHANCEMENT MODE MOSFET |
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