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参数资料
| 型号： | ZXMC10A816N8TC |
| 厂商： | Diodes Inc |
| 文件页数： | 1/11页 |
| 文件大小： | 0K |
| 描述： | MOSFET DUAL COMPL 100V 8-SOIC |
| 标准包装： | 1 |
| FET 型： | N 和 P 沟道 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 100V |
| 电流 - 连续漏极(Id) @ 25° C： | 2A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 230 毫欧 @ 1A，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 9.2nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 497pF @ 50V |
| 功率 - 最大： | 1.8W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOP |
| 包装： | 标准包装 |
| 产品目录页面： | 1475 (CN2011-ZH PDF) |
| 其它名称： | ZXMC10A816N8DIDKR |
ZXMC10A816N8
100V COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
Product Summary
Features
Device
Q1
Q2
V (BR)DSS
100V
-100V
R DS(ON) ( ? )max
0.230 @ V GS = 10V
0.300 @ V GS = 4.5V
0.235 @ V GS = -10V
0.320 @ V GS = -4.5V
I D (A)max
T A = +25°C
2.1
1.9
-2.2
-1.9
?
?
?
?
?
?
?
100V Complementary in SOIC package
Low On-Resistance
Fast Switching Speed
Low Voltage (V GS = 4.5V) gate drive
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Description
Mechanical Data
This new generation complementary dual MOSFET features low on-
resistance achievable with low gate drive.
Applications
?
?
?
Case: SO-8
Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
?
?
DC Motor Control
Backlighting
SO-8
S1
?
?
Terminals: Finish - Matte Tin annealed over Copper lead frame.
Solderable per MIL-STD-202, Method 208 e3
Weight: 0.074 grams (approximate)
D1
D2
D1
G1
S2
G2
D1
D2
D2
G1
S1
Q1 N-Channel
G2
S2
Q2 P-Channel
Top View
view
Top View
Ordering Information (Note 4)
Top
Equivalent Circuit
Product
ZXMC10A816N8
Reel size (inches)
13
Tape width (mm)
12
Quantity per reel
2,500
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http”//www.diodes.com/products/packages.html.
Marking Information
Top View
8
ZXMC
10A816
5
Logo
Part no.
YY WW
Xth week: 01 ~ 53
Year: “11” = 2011
1
4
ZXMC10A816N8
Document number: DS33497 Rev. 2 - 2
1 of 11
www.diodes.com
March 2013
? Diodes Incorporated
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| ZXMC3A16DN8TA | 功能描述:MOSFET N and P Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| ZXMC3A16DN8TC | 功能描述:MOSFET Cmp 30V NP Ch UMOS RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| ZXMC3A17DN8 | 功能描述:MOSFET N and P Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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