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参数资料
| 型号： | ZXM66P02N8TA |
| 厂商： | Diodes Inc |
| 文件页数： | 1/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 20V 8A 8-SOIC |
| 产品目录绘图： | SO-8 SO-8 Dual Pin Out |
| 标准包装： | 1 |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 6.4A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 25 毫欧 @ 3.2A，4.5V |
| Id 时的 Vgs(th)（最大）： | 700mV @ 250µA |
| 闸电荷(Qg) @ Vgs： | 43.3nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 2068pF @ 15V |
| 功率 - 最大： | 1.56W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SO |
| 包装： | 标准包装 |
| 产品目录页面： | 1472 (CN2011-ZH PDF) |
| 其它名称： | ZXM66P02N8DKR |
A Product Line of
Diodes Incorporated
ZXM66P02N8
20V P-CHANNEL ENHANCEMENT MODE MOSFET
Please click here to visit our online spice models database.
Product Summary
Features and Benefits
V (BR)DSS
-20V
R DS(on)
0.025 Ω
I D
-8.0A
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High pulse current handling in linear mode
Low on-resistance
Fast switching speed
Low gate drive
Description and Applications
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Low profile SOIC package
This high density MOSFET utilizes a unique structure that combines
Mechanical Data
the benefits of a low on-resistance with fast switching speed. This
makes it ideal for high efficiency, low voltage power management
applications. Compared to trenchFET technology, this MOSFET
structure has an intrinsically higher pulse current handling capability
in linear mode.
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Case: SO-8
Case Material: Molded Plastic. UL Flammability Classification
Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
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Inrush protection circuits
DC-DC Converters
Power management functions
Disconnect switches
Motor control
SO-8
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Terminals Connections: See diagram below
Terminals: Finish - Matte Tin annealed over Copper lead frame.
Solderable per MIL-STD-202, Method 208
Weight: 0.074 grams (approximate)
D
G
S
Top View
Ordering Information
(Note 1)
Top View
Equivalent Circuit
Product
ZXM66P02N8TA
Marking
See below
Reel size (inches)
7
Tape width (mm)
12
Quantity per reel
500
Notes:
1. For packaging details, go to our website.
Marking Information
ZXM
66P02
YYWW
ZXM = Product Type Marking Code, Line 1
66P02 = Product Type Marking Code, Line 2
YYWW = Date Code Marking
YY = Year (ex: 09 = 2009)
WW = Week (01-52)
ZXM66P02N8
Document Number DS31965 Rev. 2 - 2
1 of 5
www.diodes.com
October 2009
? Diodes Incorporated
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相关代理商/技术参数 |
参数描述 |
|---|---|
| ZXM66P02N8TC | 功能描述:MOSFET 20V P-Chnl HDMOS RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| ZXM66P03N8 | 制造商:ZETEX 制造商全称:ZETEX 功能描述:30V P-CHANNEL ENHANCEMENT MODE MOSFET |
| ZXM66P03N8(1) | 制造商:ZETEX 制造商全称:ZETEX 功能描述: |
| ZXM66P03N8TA | 功能描述:MOSFET 30V P-Chnl HDMOS RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| ZXM66P03N8TC | 功能描述:MOSFET 30V P Chnl HDMOS RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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